MT29F1G08ABBDAH4-IT:D Micron Technology Inc, MT29F1G08ABBDAH4-IT:D Datasheet - Page 31

• Manufacturer Part Number: MT29F1G08ABBDAH4-IT:D
• Manufacturer: Micron Technology Inc

Specifications of MT29F1G08ABBDAH4-IT:D

• Cell Type: NAND
• Density: 8Gb
• Interface Type: Parallel
• Address Bus: 27b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Supplier Unconfirmed

Reset Operations
RESET (FFh)
Figure 23: RESET (FFh) Operation
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
The RESET command is used to put the memory device into a known condition and to
abort the command sequence in progress.
READ, PROGRAM, and ERASE commands can be aborted while the device is in the busy
state. The contents of the memory location being programmed or the block being
erased are no longer valid. The data may be partially erased or programmed, and is inva-
lid. The command register is cleared and is ready for the next command. The data
register and cache register contents are marked invalid.
The status register contains the value E0h when WP# is HIGH; otherwise it is written
with a 60h value. R/B# goes LOW for
command register.
The RESET command must be issued to all CE#s as the first command after power-on.
The device will be busy for a maximum of 1ms.
Cycle type
I/O[7:0]
R/B#
Command
FF
31
t
RST after the RESET command is written to the
t
WB
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1Gb x8, x16: NAND Flash Memory
t
RST
© 2010 Micron Technology, Inc. All rights reserved.
Reset Operations