FDMS3604AS Fairchild Semiconductor, FDMS3604AS Datasheet - Page 11

MOSFET Power 30V Dual N-Channel PowerTrench MOSFET

FDMS3604AS

Manufacturer Part Number
FDMS3604AS
Description
MOSFET Power 30V Dual N-Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDMS3604AS

Configuration
Dual (MOSFET)
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
8 mOhms
Forward Transconductance Gfs (max / Min)
61 S
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
13 A
Power Dissipation
2.2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
Power 56
Module Configuration
Dual
Continuous Drain Current Id
40A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0058ohm
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDMS3604AS
Quantity:
100
©2011 Fairchild Semiconductor Corporation
FDMS3604AS Rev.C4
Application Information
1. Switch Node Ringing Suppression
Fairchild’s Power Stage products incorporate a proprietary design* that minimizes the peak overshoot, ringing voltage on the switch
node (PHASE) without the need of any external snubbing components in a buck converter. As shown in the figure 29, the Power Stage
solution rings significantly less than competitor solutions under the same set of test conditions.
*Patent Pending
Power Stage Device
Figure 29. Power Stage phase node rising edge, High Side Turn on
11
Competitors solution
www.fairchildsemi.com

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