FDMS3604AS Fairchild Semiconductor, FDMS3604AS Datasheet - Page 12

MOSFET Power 30V Dual N-Channel PowerTrench MOSFET

FDMS3604AS

Manufacturer Part Number
FDMS3604AS
Description
MOSFET Power 30V Dual N-Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDMS3604AS

Configuration
Dual (MOSFET)
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
8 mOhms
Forward Transconductance Gfs (max / Min)
61 S
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
13 A
Power Dissipation
2.2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
Power 56
Module Configuration
Dual
Continuous Drain Current Id
40A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0058ohm
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDMS3604AS
Quantity:
100
©2011 Fairchild Semiconductor Corporation
FDMS3604AS Rev.C4
2. Recommended PCB Layout Guidelines
As a PCB designer, it is necessary to address critical issues in layout to minimize losses and optimize the performance of the power
train. Power Stage is a high power density solution and all high current flow paths, such as VIN (D1), PHASE (S1/D2) and GND (S2),
should be short and wide for better and stable current flow, heat radiation and system performance. A recommended layout proce-
dure is discussed below to maximize the electrical and thermal performance of the part.
Figure 30. Shows the Power Stage in a buck converter topology
Figure 31. Recommended PCB Layout
12
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