FDMC8200S Fairchild Semiconductor, FDMC8200S Datasheet - Page 2

• Manufacturer Part Number: FDMC8200S
• Description: MOSFET Power 30V Dual N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMC8200S

• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Forward Transconductance Gfs (max / Min): 43 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 18 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 33
• Module Configuration: Dual
• Continuous Drain Current Id: 18A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.02ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / Rohs Status: Details

FDMC8200S Rev.C4
©2011 Fairchild Semiconductor Corporation
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
DSS
GSS
ΔV
d(on)
r
d(off)
f
DS(on)
FS
GS(th)
ΔT
ΔT
iss
oss
rss
g
g(TOT)
g(TOT)
gs
gd
Symbol
DSS
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Parameter
T
J
= 25°C unless otherwise noted
I
I
I
I
V
V
V
V
I
I
V
V
V
V
V
V
V
V
V
Q1
V
V
Q2
V
V
V
V
D
D
D
D
D
D
DS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DD
DD
DS
DD
GS
DD
GS
GS
GS
= 250 μA, V
= 1mA, V
= 250 μA, referenced to 25°C
= 1mA, referenced to 25°C
= 250 μA, referenced to 25°C
= 1mA, referenced to 25°C
= 24 V, V
= 15 V, V
= ±20 V, V
= V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 10 V, I
= 4.5 V, I
= 10 V, I
= 5 V, I
= 5 V, I
= 15 V, I
= 10 V, R
= 15 V, I
= 10 V, R
= 0 V to 10 V Q1
= 0 V to 4.5 V
DS
DS
Test Conditions
, I
, I
GS
2
D
D
D
D
D
D
D
D
D
D
GS
GEN
GEN
D
D
= 6 A
= 8.5 A
GS
= 0 V
= 250 μA
= 1mA
= 1 A,
= 1 A,
GS
DS
= 6 A
= 6 A, T
= 8.5 A
= 8.5 A, T
= 5 A
= 7.2 A
= 0 V, f = 1 MHZ
= 0 V
= 0 V
= 0 V
= 6 Ω
= 6 Ω
V
I
Q2
V
I
D
D
DD
DD
= 6 A
= 8.5 A
J
= 15 V,
= 15 V
= 125°C
J
= 125°C
Type
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Min
1.0
1.0
0.2
0.2
30
30
1080
10.3
15.7
11.4
Typ
495
145
373
2.3
2.0
7.8
1.4
1.2
7.6
3.1
1.8
1.3
8.5
7.3
3.1
7.2
1.8
1.9
14
13
16
24
22
29
43
20
35
35
21
11
-5
-6
3
1
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1436
Max
10.0
13.5
13.1
500
100
100
660
195
495
3.0
3.0
4.2
3.6
4.3
20
32
28
30
52
20
15
10
10
56
34
10
17
10
22
10
1
mV/°C
mV/°C
Units
mΩ
μA
nA
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S