FDMC8200S Fairchild Semiconductor, FDMC8200S Datasheet - Page 8

• Manufacturer Part Number: FDMC8200S
• Description: MOSFET Power 30V Dual N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMC8200S

• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Forward Transconductance Gfs (max / Min): 43 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 18 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 33
• Module Configuration: Dual
• Continuous Drain Current Id: 18A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.02ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / Rohs Status: Details

FDMC8200S Rev.C4
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q2 N-Channel)
0.01
20
10
10
0.1
50
10
1
0.01
8
6
4
2
0
Figure 20. Gate Charge Characteristics
1
0.01
0
I
D
Figure 22. Unclamped Inductive
THIS AREA IS
LIMITED BY r
= 8.5 A
Figure 24. Forward Bias Safe
2
V
Switching Capability
V
DS
t
0.1
DD
AV
, DRAIN to SOURCE VOLTAGE (V)
4
0.1
Operating Area
, TIME IN AVALANCHE (ms)
= 10 V
Q
SINGLE PULSE
T
R
T
J
A
g
DS(on)
θ
JA
, GATE CHARGE (nC)
= MAX RATED
= 25
V
T
= 125
6
DD
J
= 125
o
= 15 V
C
1
o
C/W
8
T
o
C
J
V
= 25
DD
1
= 20 V
10
T
o
J
C
= 100
10
12
o
C
10
100 ms
10 s
DC
100 us
1 ms
10 ms
1 s
14
100200
30
16
8
T
J
= 25°C unless otherwise noted
100
3000
1000
Figure 23. Maximum Continuous Drain
Figure 25. Single Pulse Maximum Power
15
12
0.1
10
100
0.001
9
6
3
0
1
10
25
0.1
Limited by package
Figure 21. Capacitance vs Drain
Current vs Case Temperature
f = 1 MHz
V
GS
0.01
V
= 0 V
GS
50
V
to Source Voltage
= 10 V
DS
T
, DRAIN TO SOURCE VOLTAGE (V)
A
t, PULSE WIDTH (sec)
,
CASE TEMPERATURE (
Dissipation
0.1
V
GS
75
1
= 4.5 V
R
θ
1
JA
= 50
100
V
GS
o
C/W
= 10 V
10
SINGLE PULSE
R
T
A
θ
o
JA
C )
= 25
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= 125
125
100
10
o
C
C
C
C
o
C/W
oss
rss
iss
1000
150
30