SI4431DY-T1-E3 Vishay, SI4431DY-T1-E3 Datasheet
SI4431DY-T1-E3
Manufacturer Part Number
SI4431DY-T1-E3
Description
MOSFET Power 30 Volt 7.0 Amp 2.5W
Manufacturer
Vishay
Datasheet
1.SI4431DY-T1-E3.pdf
(5 pages)
Specifications of SI4431DY-T1-E3
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.04 Ohms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.8 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4431DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
For SPICE model information via the Worldwide Web: http://www.siliconix.com/www/product/spice.htm
Document Number: 70151
S-51455—Rev. D, 01-Aug-05
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Surface Mounted on FR4 Board, t v 10 sec.
–30
30
Ordering Information: Si4431DY-T1
J
J
a
a
0.070 @ V
G
0.040 @ V
S
S
S
= 150_C)
= 150_C)
a
Parameter
Parameter
1
2
3
4
GS
a
a
GS
Top View
= –4.5 V
= –10 V
P-Channel 30-V (D-S) MOSFET
W
Si4431DY-T1—E3 (Lead (Pb)-Free)
SO-8
a
8
7
6
5
D
D
D
D
L = 0 1 mH
L = 0.1 mH
T
T
T
T
A
A
A
A
= 25_C
= 70_C
= 25_C
= 70_C
"5.8
"4.5
_
Symbol
Symbol
T
R
J
V
V
E
I
I
P
P
, T
DM
thJA
I
I
I
AS
GS
DS
AS
D
D
S
D
D
stg
G
P-Channel MOSFET
D TrenchFETr Power MOSFET
D 100% UIS Tested
S
D
–55 to 150
Limit
Limit
"5.8
"4.6
"20
"30
–2.3
–30
2.5
1.6
20
20
50
Vishay Siliconix
Si4431DY
www.vishay.com
Unit
Unit
_C/W
mJ
_C
W
W
V
V
A
1
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