6ED003L06FXT Infineon Technologies, 6ED003L06FXT Datasheet - Page 7

• Manufacturer Part Number: 6ED003L06FXT
• Manufacturer: Infineon Technologies

Specifications of 6ED003L06FXT

• Lead Free Status / Rohs Status: Compliant

The IC shuts down all the gate drivers power
outputs, when the VCC supply voltage is below
V
switches from critically low gate voltage levels
during on-state and therefore from excessive
power dissipation.
2.1.6
supplies, Pin 18, 20, 22, 24, 26, 28)
VB to VS is the high side supply voltage. The high
side circuit can float with respect to VSS following
the
emitter/source voltage.
Due to the low power consumption, the floating
driver stage can be supplied by bootstrap
topology connected to VCC.
Under-voltage detection operates with a rising
supply threshold of typical V
falling threshold of V
Figure 11 of the datasheet for device operating
Datasheet
CCUV-
external
= 10.4 V. This prevents the external power
VB1,2,3
high
and
CCUV-
= 10.4 V. Please refer to
VS1,2,3
side
BSUV+
power
= 12 V and a
(High
device
side
7
area as a function of the supply voltage. Details
on
immunity can be found in application note AN-
GateDriver-6ED003L06-1.
2.1.7
side outputs, Pin 14, 15, 16, 19, 23, 27)
Low side and high side power outputs are
specifically designed for pulse operation such as
gate drive of IGBT and MOSFET devices. Low
side outputs (i.e. LO1,2,3) are state triggered by
the respective inputs (/LIN1,2,3), while high side
outputs (i.e. HO1,2,3) are edge triggered by the
respective inputs (/HIN1,2,3). In particular, after
an under-voltage condition of the VBS supply, a
falling /HIN edge is necessary to turn-on the
respective high side output, while after a under-
voltage condition of the VCC supply, the low side
outputs switch to the state of their respective
inputs.
Integrated 3 Phase Gate Driver
bootstrap
LO1,2,3 and HO1,2,3 (Low and High
supply
section
6ED003L06-F
Rev. 2, Dec 2008
and
transient