6ED003L06FXT Infineon Technologies, 6ED003L06FXT Datasheet - Page 9

• Manufacturer Part Number: 6ED003L06FXT
• Manufacturer: Infineon Technologies

Specifications of 6ED003L06FXT

• Lead Free Status / Rohs Status: Compliant

3.1 Absolute Maximum Ratings
3
All voltages are absolute voltages referenced to V
Note :The minimal value for ESD immunity is 1.0kV (Human Body Model). ESD immunity inside pins connected to the low side (VCC,
HINx, LINx, FAULT, EN, RCIN, ITRIP, VSS, COM, LOx) and pins connected inside each high side itself (VBx, HOx, VSx) is guaranteed
up to 1.5kV (Human Body Model).
Note 1 : Insensitivity of bridge output to negative transient voltage up to –50V is not subject to production test – verified by design /
characterization. External bootstrap diode is mandatory. Refer to application note.
Note 2: Consistent power dissipation of all outputs
Datasheet
Symbol
dVs/dt
V
V
V
R
V
V
V
V
V
CCOM
V
V
V
P
T
T
COM
RCIN
FLT
thJA
Electrical parameters
HO
CC
BS
LO
IN
S
B
D
J
S
High side offset voltage(Note 1)
High side offset voltage (t
High side offset voltage(Note 1)
High side offset voltage (t
High side floating supply voltage (V
High side output voltage (V
Low side supply voltage (internally clamped)
Low side supply voltage (V
Gate driver ground
Low side output voltage (V
Input voltage LIN,HIN,EN,ITRIP
t
FAULT output voltage
RCIN output voltage
Power dissipation (to package) Note 2
Thermal resistance (junction to ambient, device mounted on PCB
see Fig.13)
Junction temperature
Storage temperature
offset voltage slew rate
p
<10µs
p
p
<500ns, Note 1)
<500ns, Note 1)
LO
CC
HO
Definition
vs. V
vs. V
vs. V
COM
COM
S
B
)
vs. V
)
)
SS
-potential unless otherwise specified. (T
S
9
)
Integrated 3 Phase Gate Driver
V
V
V
V
CC
CC
CC
Min.
-0.5
-0.5
-5.7
-0.5
-1.0
-0.5
-0.5
CC
-40
50
-1
-1
-V
6
-V
-
-
-
- 50
- 6
BS
BS
-
-
6ED003L06-F
Rev. 2, Dec 2008
V
V
V
A
CC
CC
V
B
Max.
+0.5
=25°C)
600
620
125
150
5.7
CCOM
1.0
20
20
25
10
15
70
50
+ 0.5
-
-
+ 0.5
+ 0.5
V/ns
Unit
K/W
°C
W
V