RUM002N05T2L Rohm Semiconductor, RUM002N05T2L Datasheet

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Drive Nch MOSFET RUM002N05  Structure Silicon N-channel MOSFET Features 1) High speed switing. 2) Small package(VMT3). 3)Ultra low voltage drive(1.2V drive).  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RUM002N05  Absolute maximum ...

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RUM002N05 Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage I Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current I Gate threshold voltage V GS (th) Static drain-source on-state R DS (on) resistance Forward transfer admittance l Y ...

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RUM002N05 Electrical characteristic curves 0 4. 2.5V GS Ta=25°C 0.3 V =1.8V GS Pulsed V =1. 1. 1. 0.2 0.4 ...

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RUM002N05 10V DS Pulsed Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.001 0.01 0.1 1 DRAIN-CURRENT : I [A] D Fig.10 Forward Transfer Admittance vs. Drain Current 1000 Ta=25°C V =30V DD V =4. ...

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RUM002N05 Measurement circuits D.U. Fig.1-1 Switching time measurement circuit Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com ○ 2010 ROHM Co., Ltd. ...

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