RUM002N05T2L Rohm Semiconductor, RUM002N05T2L Datasheet - Page 2

• Manufacturer Part Number: RUM002N05T2L
• Description: MOSFET N-CH 50V 0.2A 3VMT
• Manufacturer: Rohm Semiconductor
• Series: -r

Specifications of RUM002N05T2L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 1V @ 1mA
• Gate Charge (qg) @ Vgs: -
• Input Capacitance (ciss) @ Vds: 25pF @ 10V
• Power - Max: 150mW
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical characteristics (Ta = 25C)
Body diode characteristics (Source-Drain) (Ta = 25C)
○
RUM002N05
*Pulsed
*Pulsed
Gate-source leakage
Drain-source breakdown voltage V
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Forward voltage
c
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Parameter
Parameter
Symbol
Symbol
R
V
l Y
(BR)DSS
C
t
t
I
I
C
GS (th)
DS (on)
C
V
d(on)
d(off)
GSS
DSS
t
t
oss
iss
rss
SD
fs
r
f
l
*
*
*
*
*
*
*
*
*
*
*
Min.
Min.
0.3
0.4
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Typ.
1.6
1.7
1.9
2.0
2.4
25
15
55
6
3
4
6
-
-
-
-
-
-
2/5
Max.
Max.
10
1.0
2.2
2.4
2.7
4.0
7.2
1.2
1
-
-
-
-
-
-
-
-
-
Unit
Unit
A
A
pF
pF
pF
ns
ns
ns
ns

V
V
S
V
V
I
V
V
I
I
I
I
I
I
V
V
f=1MHz
I
V
R
R
I
D
D
D
D
D
D
D
D
s
=200mA, V
GS
DS
DS
DS
GS
GS
=1mA, V
=200mA, V
=200mA, V
=100mA, V
=40mA, V
=20mA, V
=200mA, V
=100mA, V
L
G
=300
=10
=8V, V
=50V, V
=10V, I
=10V
=0V
=4.5V
Conditions
Conditions
GS
D
DS
GS
GS
GS
=1mA
=0V
GS
GS
GS
GS
DS
DD
=0V
=0V
=1.5V
=1.2V
=0V
=10V
=4.5V
=2.5V
=1.8V
30V
2010.02 - Rev.A
Data Sheet