SJDP120R045 SEMISOUTH, SJDP120R045 Datasheet - Page 4

• Manufacturer Part Number: SJDP120R045
• Description: JFET, SIC, N-ON, 1200V, 48A, TO247
• Manufacturer: SEMISOUTH

Specifications of SJDP120R045

• Rohs Compliant: YES
• Transistor Type: JFET
• Breakdown Voltage Vbr: 1200V
• Power Dissipation Pd: 208W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Continuous Drain Current Id: 48A

SJDP120R045 Rev1.3
1.E+04
1.E+03
1.E+02
1.E+01
Figure 7. Drain-Source On-resistance
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
Figure 9. Typical Capacitance
R
0
0
DS(ON)
C = f(V
25
T
V
= f(T
j
DS
DS
, Junction Temperature (°C)
300
); V
, Drain-Source Voltage (V)
j
); I
50
GS
D
= 30A; parameter: V
C
= -15 V; f = 100 kHz
rss
75
600
100
C
C
oss
iss
125
900
GS
150
2V
1V
0V
1200
175
PRELIMINARY
4/6
Figure 8. Drain-Source On-resistance
1E-04
1E-05
1E-06
1E-07
Figure 10. Drain-Source Leakage
0.050
0.045
0.040
0.035
0.030
I
DSS
0
R
DS(on)
-1.0
= f(V
= f(V
V
DS
DS
); V
V
300
, Drain-Source Voltage (V)
GS
GS
GS
, Gate-Source Voltage (V)
); I
SJDP120R045
= -15V; parameter: T
D
0.0
= 30A; T
Silicon Carbide
600
j
= 25
1.0
o
C
900
j
May 2011
150
100
25
o
1200
o
o
C
C
C
2.0