74LVC4066PW,118 NXP Semiconductors, 74LVC4066PW,118 Datasheet - Page 6

IC SWITCH QUAD SPST 14TSSOP

74LVC4066PW,118

Manufacturer Part Number
74LVC4066PW,118
Description
IC SWITCH QUAD SPST 14TSSOP
Manufacturer
NXP Semiconductors
Series
74LVCr
Type
Analog Switchr
Datasheet

Specifications of 74LVC4066PW,118

Package / Case
14-TSSOP (0.173", 4.40mm Width)
Function
Switch
Circuit
4 x SPST - NO
On-state Resistance
6 Ohm
Voltage Supply Source
Single Supply
Voltage - Supply, Single/dual (±)
1.65 V ~ 5.5 V
Current - Supply
0.1µA
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Switch Configuration
SPST
On Resistance (max)
34 Ohm (Typ) @ 1.95 V
On Time (max)
5.3 ns (Typ) @ 1.95 V
Off Time (max)
4.2 ns (Typ) @ 1.95 V
Supply Voltage (max)
5.5 V
Supply Voltage (min)
1.65 V
Maximum Power Dissipation
500 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Package
14TSSOP
Maximum On Resistance
195@1.95V Ohm
Maximum Propagation Delay Bus To Bus
0.2(Typ)@5.5V|0.3(Typ)@3.6V|0.4(Typ)@2.7V|0.8(Typ)@1.95V ns
Maximum Low Level Output Current
50 mA
Maximum Turn-off Time
4.2(Typ)@1.95V ns
Maximum Turn-on Time
5.3(Typ)@1.95V ns
Switch Architecture
SPST
Power Supply Type
Single
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
74LVC4066PW-T
74LVC4066PW-T
935273718118
NXP Semiconductors
Table 6.
At recommended operating conditions voltages are referenced to GND (ground = 0 V).
[1]
[2]
Table 7.
At recommended operating conditions; voltages are referenced to GND (ground 0 V); for graphs see
74LVC4066
Product data sheet
Symbol Parameter
C
C
C
Symbol
R
Fig 6.
I
S(OFF)
S(ON)
ON(peak)
All typical values are measured at T
These typical values are measured at V
V
Test circuit for measuring OFF-state leakage
current
input
capacitance
OFF-state
capacitance
ON-state
capacitance
V
Parameter
ON resistance (peak) V
I
Static characteristics
ON resistance
IL
= V
CC
V I
9.1 Test circuits
9.2 ON resistance
or GND and V
nE
nZ
Conditions
V
CC
GND
O
= GND or V
…continued
Conditions
amb
I
nY
I
V
I
I
I
I
= GND to V
SW
SW
SW
SW
SW
CC
= 25 C.
CC
= 4 mA;
= 8 mA; V
= 12 mA; V
= 24 mA; V
= 32 mA; V
I
= 1.65 V to 1.95 V
S
= 3.3 V.
All information provided in this document is subject to legal disclaimers.
001aag488
CC
.
V O
Rev. 4 — 24 November 2010
CC
CC
; see
CC
CC
CC
= 2.3 V to 2.7 V
= 2.7 V
= 3 V to 3.6 V
= 4.5 V to 5.5 V
Figure 8
Fig 7.
Min
V
Test circuit for measuring ON-state leakage
current
-
-
-
I
40 C to +85 C
= V
V
IH
Min
CC
40 C to +85 C
-
-
-
-
-
Typ
12.5
14.0
or GND and V
V I
8.0
I
S
[1]
Typ
34.0
12.0
10.4
7.8
6.2
nE
nZ
[1]
Max
-
-
-
Max
130
30
25
20
15
O
V
CC
= open circuit.
GND
74LVC4066
40 C to +125 C Unit
40 C to +125 C Unit
Quad bilateral switch
Min
Figure 9
Min
-
-
-
nY
-
-
-
-
-
001aag489
© NXP B.V. 2010. All rights reserved.
V O
to
Max
Max
195
30
45
38
23
Figure
-
-
-
6 of 23
pF
pF
pF
14.

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