PSMN8R0-30YL,115 NXP Semiconductors, PSMN8R0-30YL,115 Datasheet - Page 11

• Manufacturer Part Number: PSMN8R0-30YL,115
• Description: MOSFET Power N-Ch 30V TrenchMOS logic level FET
• Manufacturer: NXP Semiconductors

Specifications of PSMN8R0-30YL,115

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.3 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 62 A
• Power Dissipation: 56 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Fall Time: 8 ns
• Gate Charge Qg: 9 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 29 ns
• Lead Free Status / Rohs Status: Details
• Other names: 934064947115

NXP Semiconductors
7. Package outline
Fig 19. Package outline SOT669 (LFPAK; Power-SO8)
PSMN8R0-30YLC
Product data sheet
Plastic single-ended surface-mounted package (LFPAK; Power-SO8); 4 leads
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
UNIT
mm
H
OUTLINE
VERSION
SOT669
L 1
L 2
D
1.20
1.01
A
0.15
0.00
A 1
1.10
0.95
A 2
1
e
0.25
N-channel 30 V 7.9 mΩ logic level MOSFET in LFPAK using NextPower technology
A 3
IEC
2
b 2
E
0.50
0.35
b
1/2
4.41
3.62
e
3
b 2
b
2.2
2.0
b 3
MO-235
All information provided in this document is subject to legal disclaimers.
JEDEC
4
0.9
0.7
b 4
0
A
REFERENCES
w
Rev. 2 — 1 September 2011
0.25
0.19
M
c
mounting
A
base
0.30
0.24
c 2
c 2
JEITA
scale
4.10
3.80
D
2.5
(1)
A 2
A
D 1
max
4.20
c
(1)
A 1
E
5.0
4.8
C
(1)
C
X
E 1
5 mm
3.3
3.1
(1)
1.27
e
D 1
PSMN8R0-30YLC
detail X
6.2
5.8
H
PROJECTION
EUROPEAN
0.85
0.40
L
1.3
0.8
L 1
b 3
L
E 1
1.3
0.8
L 2
© NXP B.V. 2011. All rights reserved.
0.25
ISSUE DATE
w
(A )
b 4
06-03-16
11-03-25
3
y C
0.1
y
θ
SOT669
8°
0°
θ
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