PSMN8R0-30YL,115 NXP Semiconductors, PSMN8R0-30YL,115 Datasheet - Page 2

• Manufacturer Part Number: PSMN8R0-30YL,115
• Description: MOSFET Power N-Ch 30V TrenchMOS logic level FET
• Manufacturer: NXP Semiconductors

Specifications of PSMN8R0-30YL,115

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.3 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 62 A
• Power Dissipation: 56 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Fall Time: 8 ns
• Gate Charge Qg: 9 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 29 ns
• Lead Free Status / Rohs Status: Details
• Other names: 934064947115

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PSMN8R0-30YLC
Product data sheet
Pin
1
2
3
4
mb
Type number
PSMN8R0-30YLC
Symbol Description
S
S
S
G
D
Pinning information
Ordering information
source
source
source
gate
mounting base;
connected to drain
Table 1.
Package
Name
LFPAK;
Power-SO8
Symbol
Dynamic characteristics
Q
Q
N-channel 30 V 7.9 mΩ logic level MOSFET in LFPAK using NextPower technology
GD
G(tot)
Quick reference data
Parameter
gate-drain charge
total gate charge
Description
plastic single-ended surface-mounted package; 4 leads
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2011
Simplified outline
SOT669 (LFPAK;
…continued
Power-SO8)
1 2 3 4
Conditions
V
V
see
V
V
see
GS
DS
GS
DS
mb
Figure 15
Figure 15
= 15 V; see
= 15 V; see
= 4.5 V; I
= 4.5 V; I
D
D
= 15 A;
= 15 A;
Figure
Figure
PSMN8R0-30YLC
Graphic symbol
14;
14;
Min
-
-
mbb076
G
Typ
2.3
7
© NXP B.V. 2011. All rights reserved.
D
S
SOT669
Version
Max
-
-
Unit
nC
nC
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