PC28F512P30EFA Micron Technology Inc, PC28F512P30EFA Datasheet - Page 17

• Manufacturer Part Number: PC28F512P30EFA
• Manufacturer: Micron Technology Inc

Specifications of PC28F512P30EFA

• Cell Type: NOR
• Density: 512Mb
• Interface Type: Parallel/Serial
• Address Bus: 25b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: BGA
• Program/erase Volt (typ): 8.5 to 9.5V
• Sync/async: Async/Sync
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 2V
• Word Size: 16b
• Number Of Words: 32M
• Supply Current: 31mA
• Mounting: Surface Mount
• Pin Count: 64
• Lead Free Status / Rohs Status: Compliant

P30-65nm
Note:
5.3
5.4
Note:
Datasheet
17
In asynchronous page mode, sixteen data words are “sensed” simultaneously from the
flash memory array and loaded into an internal page buffer. The buffer word
corresponding to the initial address on the address bus is driven onto DQ[15:0] after
the initial access delay. The lowest four address bits determine which word of the
16-word page is output from the data buffer at any given time.
Refer to
for more detailed information.
If only asynchronous reads are to be performed, CLK should be tied to a valid V
WAIT signal can be floated and ADV# must be tied to ground.
Read - Synchronous Mode
To perform a synchronous burst read on array or non-array, an initial address is driven
onto the address bus, and CE# is asserted. WE# and RST# must already have been
deasserted. ADV# is asserted, and then deasserted to latch the address. Alternately,
ADV# can remain asserted throughout the burst access, in which case the address is
latched on the next valid CLK edge while ADV# is asserted. Once OE# is asserted, the
the first word is driven onto DQ[15:0] on the next valid CLK edge after initial access
latency delay (see
Subsequent data is output on valid CLK edges following a minimum delay t
Table 25, “AC Read Specifications -” on page
However, for a synchronous non-array read, the same word of data will be output on
successive clock edges until the burst length requirements are satisfied.
The WAIT signal indicates data valid when the device is operating in synchronous mode
(RCR.15=0). The WAIT signal is only “deasserted” when data is valid on the bus. When
the device is operating in synchronous non-array read mode, such as read status, read
ID, or read query, the WAIT signal is also “deasserted” when data is valid on the bus.
WAIT behavior during synchronous non-array reads at the end of word line works
correctly only on the first data access.
Refer to the following waveforms for more detailed information:
“Synchronous Single-Word Array or Non-array Read Timing for Easy BGA” on page
and
on page
BGA” on page
Write
To perform a write operation, both CE# and WE# are asserted while RST# and OE# are
deasserted. During a write operation, address and data are latched on the rising edge
of WE# or CE#, whichever occurs first.
shows the bus cycle sequence for each of the supported device commands, while
Table 6, “Command Codes and Definitions” on page 19
Table 26, “AC Write Specifications” on page 55
When the device is operating in write operations, WAIT is set to a deasserted state as
determined by RCR.10.
Write operations with invalid VCC and/or VPP voltages can produce spurious results and
should not be attempted.
Figure 22, “Continuous Burst Read, showing an Output Delay Timing for Easy BGA”
Figure 20, “Asynchronous Page-Mode Read Timing for Easy BGA” on page 53
54, and
55.
Figure 23, “Synchronous Burst-Mode Four-Word Read Timing for Easy
Section 11.2.2, “Latency Count (RCR[14:11])” on page
(Easy
Table 7, “Command Bus Cycles” on page 21
51).
for signal-timing details.
BGA)
describes each command. See
Figure 21,
Order Number:208042-05
36).
CHQV
IH
Apr 2010
(see
level,
54,