VQ1004J Vishay, VQ1004J Datasheet
VQ1004J
Specifications of VQ1004J
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VQ1004J Summary of contents
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... 100_C 0 6. 25_C 100_C 2 170 thJA R 20 thJC stg 2N6660, VQ1004J/P Vishay Siliconix I (A) D 1.1 0.46 D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays Device Marking “S” = Siliconix Logo ...
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... VQ1004J/P Vishay Siliconix _ Parameter Symbol Static Drain-Source V (BR)DSS Breakdown Voltage Gate-Threshold Voltage V GS(th) Gate-Body Leakage I GSS Zero Gate Zero Gate I DSS Voltage Drain Current b On-State Drain Current I D(on) b Drain-Source On-Resistance r DS(on) b Forward Transconductance Common Source g b Output Conductance Diode Forward Voltage ...
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... I – Drain Current (A) D Document Number: 70222 S-04379—Rev. E, 16-Jul- 25_C 125_C 1.6 2.0 2N6660, VQ1004J/P Vishay Siliconix Output Characteristics for Low Gate Drive 100 0.4 0.8 1.2 V – Drain-to-Source Voltage (V) DS On-Resistance vs. Gate-to-Source Voltage 2.8 1 ...
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... VQ1004J/P Vishay Siliconix Threshold Region 150_C J 1 0.1 125_C 0.01 0.5 1.0 1.5 V – Gate-to-Source Voltage (V) GS Gate Charge 10.0 7.5 5.0 2 100 200 300 Q – Total Gate Charge (pC) g Normalized Effective Transient Thermal Impedance, Junction-to-Case (TO-205AD) 1.0 Duty Cycle = 0.5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...