VQ1004J Vishay, VQ1004J Datasheet - Page 4

• Manufacturer Part Number: VQ1004J
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of VQ1004J

• Number Of Elements: 4
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 3.5Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±30V
• Continuous Drain Current: 460mA
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 14
• Package Type: PDIP
• Lead Free Status / Rohs Status: Not Compliant

2N6660, VQ1004J/P
Vishay Siliconix
www.vishay.com
11-4
0.01
1.0
0.1
0.01
15.0
12.5
10.0
0.1
7.5
5.0
2.5
10
1
0
0.1
0.5
0
Duty Cycle = 0.5
0.2
0.1
V
I
DS
D
100
0.01
= 1.0 A
T
= 5 V
V
J
= 150_C
GS
0.02
Q
1.0
125_C
g
– Gate-to-Source Voltage (V)
200
Threshold Region
– Total Gate Charge (pC)
Normalized Effective Transient Thermal Impedance, Junction-to-Case (TO-205AD)
0.05
Gate Charge
Single Pulse
1.0
300
V
1.5
DS
= 30 V
400
–55_C
48 V
25_C
500
2.0
t
1
– Square Wave Pulse Duration (sec)
10
600
_
100
100
120
100
80
60
40
20
50
20
10
0
5
2
1
0.1
0
V
R
V
DD
GS
G
Load Condition Effects on Switching
V
f = 1 MHz
= 25 W
= 25 V
= 0 to 10 V
GS
10
V
= 0 V
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
DS
P
DM
JM
– Drain-to-Source Voltage (V)
I
D
– T
t
– Drain Current (A)
1
Capacitance
C
1 K
20
= P
t
2
DM
1
Z
thJC
thJC
C
t
t
1
2
rss
(t)
30
= 20_C/W
C
S-04379—Rev. E, 16-Jul-01
Document Number: 70222
oss
t
t
t
t
C
d(off)
r
d(on)
f
iss
40
10 K
10
50