PHN210 NXP Semiconductors, PHN210 Datasheet - Page 4

• Manufacturer Part Number: PHN210
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PHN210

• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 3.4A
• Power Dissipation: 2W
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
January 2002
Dual N-channel enhancement mode
TrenchMOS
0.5
0.4
0.3
0.2
0.1
10
10
Fig.5. Typical output characteristics, T
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
Fig.6. Typical on-state resistance, T
0
0
0
0
Drain-Source On Resistance, RDS(on) (Ohms)
Drain Current, ID (A)
Drain current, ID (A)
Tj = 25 C
VDS > ID X RDS(ON)
3.2 V
Fig.7. Typical transfer characteristics.
0.5
0.2
1
3.4 V
VGS = 20 V
0.4
1
R
3.6 V
2
I
DS(ON)
Drain-Source Voltage, VDS (V)
D
I
1.5
D
0.6
= f(V
TM
Drain Current, ID (A)
Gate-source voltage, VGS (V)
= f(V
3.8V 4 V
3
= f(I
2
0.8
transistor
DS
GS
4
10 V
2.5
); parameter V
D
); parameter T
); parameter V
1
5
3
4.2 V
5V
1.2
Tj = 25 C
3.5
6
1.4
4
7
1.6
150 C
GS
4.5
j
GS
8
1.8
VGS =5 V
4.2 V
j
3.8 V
3.6 V
3.2 V
3.4 V
Tj = 25 C
4 V
j
= 25 ˚C.
5
= 25 ˚C.
9
2
20V
10V
5.5
10
6
4
Fig.9. Normalised drain-source on-state resistance.
1.5
0.5
6
5
4
3
2
1
0
2
1
0
V
-50
Fig.8. Typical transconductance, T
0
Transconductance, gfs (S)
a
GS(TO)
4
3
2
1
0
-60 -40 -20
VGS(TO) / V
1
Fig.10. Gate threshold voltage.
= f(T
SOT223 30V Trench
a = R
2
g
j
); conditions: I
0
fs
3
= f(I
DS(ON)
0
Drain current, ID (A)
Tj = 25 C
D
20
4
) ; parameter T
150 C
/R
max.
typ.
min.
Tj / C
Tj / C
DS(ON)25 ˚C
40
50
5
Normalised RDS(ON) = f(Tj)
60
D
= 1 mA; V
6
80 100 120 140
Product specification
= f(T
7
100
j
j
)
j
8
= 25 ˚C.
DS
PHN210
= V
Rev 1.100
9
GS
150
10