PHN210 NXP Semiconductors, PHN210 Datasheet - Page 5

• Manufacturer Part Number: PHN210
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PHN210

• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 3.4A
• Power Dissipation: 2W
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
January 2002
Dual N-channel enhancement mode
TrenchMOS
Fig.13. Typical turn-on gate-charge characteristics.
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
1000
15
14
13
12
11
10
100
9
8
7
6
5
4
3
2
1
0
10
Fig.12. Typical capacitances, C
0
I
C = f(V
Gate-source voltage, VGS (V)
D
0.1
0
ID = 2.3A
Tj = 25 C
VDD = 15 V
Capacitances, Ciss, Coss, Crss (pF)
= f(V
Fig.11. Sub-threshold drain current.
1
GS)
DS
V
2
); conditions: V
; conditions: T
GS
1
min
TM
= f(Q
Drain-Source Voltage, VDS (V)
3
Gate charge, QG (nC)
transistor
1
G
4
); parameter V
2
5
typ
j
GS
= 25 ˚C; V
= 0 V; f = 1 MHz
6
Sub-Threshold Conduction
max
3
10
7
iss
DS
, C
DS
8
oss
Ciss
Coss
4
Crss
= V
, C
9
GS
rss
100
.
10
5
5
avalanche current (I
10
0.1
10
9
8
7
6
5
4
3
2
1
0
I
1
1E-06
F
Fig.15. Maximum permissible non-repetitive
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
= f(V
Source-Drain Diode Current, IF (A)
Non-repetitive Avalanche current, IAS (A)
VGS = 0 V
Fig.14. Typical reverse diode current.
VDS
ID
SDS
); conditions: V
unclamped inductive load
1E-05
tp
Drain-Source Voltage, VSDS (V)
Avalanche time, tp (s)
Tj prior to avalanche =125 C
AS
) versus avalanche time (t
1E-04
GS
150 C
= 0 V; parameter T
Product specification
1E-03
Tj = 25 C
PHN210
25 C
PHN210
Rev 1.100
1E-02
p
j
);