LH28F640SPHT-PTLZ7 Sharp Electronics, LH28F640SPHT-PTLZ7 Datasheet - Page 27

• Manufacturer Part Number: LH28F640SPHT-PTLZ7
• Manufacturer: Sharp Electronics

Specifications of LH28F640SPHT-PTLZ7

• Cell Type: NOR
• Density: 64Mb
• Access Time (max): 120ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 23/22Bit
• Operating Supply Voltage (typ): 3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 8M/4M
• Supply Current: 50mA
• Mounting: Surface Mount
• Pin Count: 56
• Lead Free Status / Rohs Status: Compliant

1.2.5 AC Characteristics - Write Operations
NOTES:
1. The timing characteristics for reading the status register during block erase, (page buffer) program, block lock
2. A write operation can be initiated and terminated with either CE
3. Sampled, not 100% tested.
4. Write pulse width low (t
5. Write pulse width high (t
6. V
7. Refer to Table 5 for valid address and data for block erase, (page buffer) program, block lock configuration and OTP
8. The output delay time t
9. The timing is defined from the first edge of CE
10. The timing is defined from the first edge of CE
11. STS timings depend on STS configuration.
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
(t
t
(t
AVAV
PHWL
ELWL
WLWH
DVWH
AVWH
WHEH
WHDX
WHAX
WHWL
VVWH
WHGL
WHR0
WHRL
QVVL
FLWH
WHFL
configuration and OTP program operations are the same as during read-only operations. Refer to AC Characteristics for
read-only operations.
of WE# (whichever occurs last) to the first edge of CE
(whichever occurs first). Hence, t
of WE# (whichever occurs first) to the first edge of CE
(whichever occurs last). Hence, t
or OTP program success (SR.1/3/4/5=0).
program.
FLEH
EHFL
PEN
Symbol
/t
/t
/t
/t
(t
(t
(t
(t
(t
(t
(t
(t
(t
(t
(t
(t
FHWH
(t
WHFH
should be held at V
FHEH
EHFH
WLEL
PHEL
EHR0
AVEH
EHRL
EHWH
EHGL
ELEH
DVEH
EHDX
EHAX
VVEH
EHEL
)
)
)
)
)
)
)
)
)
)
)
)
)
)
)
Write Cycle Time
RP# High Recovery to WE# (CE
CE
WE# (CE
Data Setup to WE# (CE
Address Setup to WE# (CE
CE
Data Hold from WE# (CE
Address Hold from WE# (CE
WE# (CE
V
Write Recovery before Read
WE# (CE
V
BYTE# Setup to WE# (CE
BYTE# Hold from WE# (CE
PEN
PEN
X
X
AVQV
WP
WPH
(WE#) Setup to WE# (CE
(WE#) Hold from WE# (CE
PEN
Setup to WE# (CE
Hold from Valid SRD, STS High Z
) is defined from the first edge of CE
) is defined from the first edge of CE
=V
or t
X
X
X
) Pulse Width Low
) Pulse Width High
) High to SR.7 Going "0", STS Going Low
PENH
WPH
ELQV
WP
=t
=t
WLWH
until determination of block erase, (page buffer) program, block lock configuration
is required in addition to t
WHWL
V
CC
X
Parameter
X
=t
) Going High
=2.7V-3.6V, T
=t
X
) Going High
X
ELEH
0
X
) High
EHEL
, CE
) Going High
0
) Going High
X
, CE
X
) High
) High
X
=t
X
(1), (2)
) Going Low
1
LHF64P05
=t
X
) Going Low
1
WLEH
or CE
) High
WHEL
or CE
0
0
, CE
, CE
A
=t
2
=-40°C to +85°C
=t
1
1
2
that enables the device.
ELWH
or CE
EHWL
that disables the device.
or CE
0
WHGL
0
, CE
, CE
0
, CE
.
.
2
2
1
1
, CE
that disables the device or the rising edge of WE#
that enables the device or the falling edge of WE#
(t
1
or CE
EHGL
or CE
2
or WE#.
2
) for read operations after command writes.
2
that enables the device or the falling edge
that disables the device or the rising edge
4, 9, 10
5, 9, 10
3, 6, 11
10, 11
Notes
7, 10
7, 10
3, 10
3, 9
10
10
10
10
10
9
8
Min.
120
70
30
50
55
35
50
90
1
0
0
0
0
0
0
Max.
500
Rev. 0.06
Unit
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
24