MMPQ3904R1 ON Semiconductor, MMPQ3904R1 Datasheet - Page 2

MMPQ3904R1

Manufacturer Part Number
MMPQ3904R1
Description
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMPQ3904R1

Transistor Polarity
NPN
Number Of Elements
4
Collector-emitter Voltage
40V
Collector-base Voltage
60V
Emitter-base Voltage
6V
Collector Current (dc) (max)
200mA
Dc Current Gain (min)
30
Power Dissipation
800mW
Frequency (max)
300MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
16
Package Type
SOIC
Lead Free Status / Rohs Status
Not Compliant
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
ELECTRICAL CHARACTERISTICS
ON CHARACTERISTICS (1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Current–Gain — Bandwidth Product
Output Capacitance
Input Capacitance
Turn–On Time
Turn–Off Time
(I C = 0.1 mAdc, V CE = 1.0 Vdc)
(I C = 1.0 mAdc, V CE = 1.0 Vdc)
(I C = 10 mAdc, V CE = 1.0 Vdc)
(I C = 10 mAdc, I B = 1.0 mAdc)
(I C = 10 mAdc, I B = 1.0 mAdc)
(I C = 10 mAdc, V CE = 20 Vdc, f = 100 MHz)
(V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz)
(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)
(I C = 10 Vdc, V BE(off) = –0.5 Vdc, I B1 = 1.0 mAdc)
(I C = 10 mAdc, I B1 = I B2 = 1.0 mAdc)
Characteristic
(T A = 25 C unless otherwise noted) (Continued)
http://onsemi.com
MMPQ3904
2
V CE(sat)
V BE(sat)
Symbol
h FE
C ob
C ib
t on
t off
f T
Min
250
30
50
75
0.65
Typ
160
200
300
136
0.1
2.0
4.0
90
37
Max
0.85
0.2
4.0
8.0
MHz
Unit
Vdc
Vdc
pF
pF
ns
ns

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