BG3130E6327XT Infineon Technologies, BG3130E6327XT Datasheet - Page 3

• Manufacturer Part Number: BG3130E6327XT
• Manufacturer: Infineon Technologies

Specifications of BG3130E6327XT

• Application: VHF
• Channel Type: N
• Channel Mode: Depletion
• Continuous Drain Current: 0.025A
• Drain Source Voltage (max): 8V
• Power Gain (typ)@vds: 31@5VdB
• Noise Figure (max): 1.7(Typ)dB
• Package Type: SOT-363
• Pin Count: 6
• Forward Transconductance (typ): 0.033S
• Input Capacitance (typ)@vds: 1.9@5V@Gate 1pF
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

Electrical Characteristics at T
Parameter
DC Characteristics
Drain-source breakdown voltage
I
Gate1-source breakdown voltage
+I
Gate2-source breakdown voltage
+I
Gate1-source leakage current
V
Gate2-source leakage current
V
Drain current
V
Drain-source current
V
Gate1-source pinch-off voltage
V
Gate2-source pinch-off voltage
V
D
G1S
G2S
DS
DS
DS
DS
G1S
G2S
= 10 µA, V
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, I
= 6 V, V
= 8 V, V
= 10 mA, V
= 10 mA, V
D
G1S
G2S
G2S
G1S
G2S
G1S
= 20 µA
= 0 V, V
= 4 V, R
= 4 V, I
= 0 V, V
G2S
G1S
= 0 V
= 0 V, V
= 0 V, V
= 0 V, V
D
G2S
G1
G2S
DS
= 20 µA
= 120 k
= 0 V
= 4.5 V
DS
DS
= 0 V
A
= 0 V
= 0 V
= 25°C, unless otherwise specified
3
Symbol
V
+V
+V
+I
+I
I
I
V
V
DSS
DSX
(BR)DS
G1S(p)
G2S(p)
G1SS
G2SS
(BR)G1SS
(BR)G2SS
min.
12
6
6
-
-
-
-
-
-
Values
typ.
0.7
0.6
10
-
-
-
-
-
-
max.
15
15
50
50
10
BG3130...
2007-06-01
-
-
-
-
Unit
V
µA
nA
µA
mA
V