BG3130E6327XT Infineon Technologies, BG3130E6327XT Datasheet - Page 4

BG3130E6327XT

Manufacturer Part Number
BG3130E6327XT
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BG3130E6327XT

Application
VHF
Channel Type
N
Channel Mode
Depletion
Continuous Drain Current
0.025A
Drain Source Voltage (max)
8V
Power Gain (typ)@vds
31@5VdB
Noise Figure (max)
1.7(Typ)dB
Package Type
SOT-363
Pin Count
6
Forward Transconductance (typ)
0.033S
Input Capacitance (typ)@vds
1.9@5V@Gate 1pF
Operating Temp Range
-55C to 150C
Mounting
Surface Mount
Number Of Elements
2
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / Rohs Status
Compliant
Electrical Characteristics at T
Parameter
AC Characteristics V
Forward transconductance
Gate1 input capacitance
f = 10 MHz
Output capacitance
f = 10 MHz
Power gain
f = 800 MHz
f = 45 MHz
Noise figure
f = 800 MHz
f = 45 MHz
Gain control range
V
Cross-modulation k=1%, f
AGC = 0 dB
AGC = 10 dB
AGC = 40 dB
G2S
= 4 ... 0 V, f = 800 MHz
DS
= 5V, V
w
=50MHz, f
A
G2S
= 25°C, unless otherwise specified
= 4V, (I
unw
=60MHz
D
= 14 mA) (verified by random sampling)
4
Symbol
g
C
C
G
F
X
fs
G
mod
g1ss
dss
p
p
min.
45
90
96
-
-
-
-
-
-
-
-
Values
100
typ.
1.9
1.1
1.3
1.7
33
24
31
87
-
-
max.
BG3130...
2007-06-01
-
-
-
-
-
-
-
-
-
-
-
Unit
mS
pF
dB
dB
-

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