BF996ST NXP Semiconductors, BF996ST Datasheet

BF996ST

Manufacturer Part Number
BF996ST
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF996ST

Application
UHF
Channel Type
N
Channel Mode
Depletion
Continuous Drain Current
0.03A
Drain Source Voltage (max)
20V
Power Gain (typ)@vds
25@15VdB
Noise Figure (max)
1.8(Typ)dB
Package Type
SOT
Pin Count
3 +Tab
Input Capacitance (typ)@vds
2.3@15V@Gate 1/1.2@15V@Gate 2pF
Output Capacitance (typ)@vds
0.8@15VpF
Reverse Capacitance (typ)
0.025@15VpF
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / Rohs Status
Compliant
DISCRETE SEMICONDUCTORS
DATA SHEET
BF996S
N-channel dual-gate MOS-FET
Product specification
April 1991

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BF996ST Summary of contents

Page 1

DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification DISCRETE SEMICONDUCTORS April 1991 ...

Page 2

... NXP Semiconductors N-channel dual-gate MOS-FET FEATURES  Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS  RF applications such as: – UHF television tuners – Professional communication equipment. PINNING PIN SYMBOL source 2 d drain 3 g gate gate 1 ...

Page 3

... NXP Semiconductors N-channel dual-gate MOS-FET LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V drain-source voltage DS I drain current (DC average drain current D(AV) I gate 1 source G1-S I gate 2 source G1-S P total power dissipation tot T storage temperature range stg ...

Page 4

... NXP Semiconductors N-channel dual-gate MOS-FET STATIC CHARACTERISTICS = 25 C unless otherwise specified SYMBOL PARAMETER I gate cut-off current G1SS I gate cut-off current G2SS V gate-source breakdown voltage (BR)G1-SS V gate-source breakdown voltage (BR)G2-SS I drain current DSS V gate-source cut-off current (P)G1-S V gate-source cut-off current (P)G2-S DYNAMIC CHARACTERISTICS ...

Page 5

... NXP Semiconductors N-channel dual-gate MOS-FET PACKAGE OUTLINE Plastic surface-mounted package; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 OUTLINE VERSION IEC SOT143B April 1991 scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES ...

Page 6

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 7

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 8

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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