M29DW324DB70N6 STMicroelectronics, M29DW324DB70N6 Datasheet

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M29DW324DB70N6

Manufacturer Part Number
M29DW324DB70N6
Description
Flash 32M (4Mx8 or 2Mx16)
Manufacturer
STMicroelectronics
Datasheet

Specifications of M29DW324DB70N6

Data Bus Width
8 bit, 16 bit
Memory Type
NOR Flash
Memory Size
32 Mbit
Architecture
Sectored
Interface Type
CFI
Access Time
70 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3 V
Maximum Operating Current
10 mA
Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
TSOP-48
Organization
4 MB x 8
Lead Free Status / Rohs Status
No

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FEATURES SUMMARY
June 2003
SUPPLY VOLTAGE
– V
– V
ACCESS TIME: 70, 90ns
PROGRAMMING TIME
– 10µs per Byte/Word typical
– Double Word/ Quadruple Byte Program
MEMORY BLOCKS
– Dual Bank Memory Array: 16Mbit+16Mbit
– Parameter Blocks (Top or Bottom Location)
DUAL OPERATIONS
– Read in one bank while Program or Erase in
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
V
PROTECT
TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
– 64 bit Security Code
EXTENDED MEMORY BLOCK
– Extra block used as security block or to store
LOW POWER CONSUMPTION
– Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29DW324DT: 225Ch
– Bottom Device Code M29DW324DB: 225Dh
PP
Read
other
Erase Suspend
additional information
CC
PP
/WP PIN for FAST PROGRAM and WRITE
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block)
=12V for Fast Program (optional)
= 2.7V to 3.6V for Program, Erase and
Figure 1. Packages
3V Supply Flash Memory
TFBGA48 (ZE)
TFBGA63 (ZA)
M29DW324DB
M29DW324DT
TSOP48 (N)
12 x 20mm
7 x 11mm
6 x 8mm
FBGA
FBGA
1/49

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M29DW324DB70N6 Summary of contents

Page 1

... ACCESS TIME: 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical – Double Word/ Quadruple Byte Program MEMORY BLOCKS – Dual Bank Memory Array: 16Mbit+16Mbit – Parameter Blocks (Top or Bottom Location) DUAL OPERATIONS – Read in one bank while Program or Erase in other ERASE SUSPEND and RESUME MODES – ...

Page 2

M29DW324DT, M29DW324DB TABLE OF CONTENTS SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

Quadruple Byte Program Command ...

Page 4

... Table 25. CFI Query System Interface Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Table 26. Device Geometry Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Table 27. Primary Algorithm-Specific Extended Query Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Table 28. Security Code Area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 APPENDIX C. EXTENDED MEMORY BLOCK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 Factory Locked Extended Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 Customer Lockable Extended Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 Table 29. Extended Block Address and Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 APPENDIX D. BLOCK PROTECTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 Programmer Technique ...

Page 5

... Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special op- erations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identi- fied ...

Page 6

M29DW324DT, M29DW324DB Figure 3. TSOP Connections 6/49 A15 1 A14 A13 A12 A11 A10 A9 A8 A19 M29DW324DT A20 M29DW324DB /WP RB A18 A17 ...

Page 7

Figure 4. TFBGA63 Connections (Top view through package ( ( ( (1) NC Note: 1. Balls are shorted together via the substrate but not ...

Page 8

M29DW324DT, M29DW324DB Figure 5. TFBGA48 Connections (Top view through package Table 2. Bank Architecture Bank Bank Size A 16 Mbit B 16 Mbit 8/ ...

Page 9

Figure 6. Block Addresses (x8) Top Boot Block (x8) Address lines A20-A0, DQ15A-1 000000h 64 KByte or 32 KWord 00FFFFh Bank B 1F0000h 64 KByte or 32 KWord 1FFFFFh 200000h 64 KByte or 32 KWord 20FFFFh 3E0000h 64 KByte or ...

Page 10

M29DW324DT, M29DW324DB Figure 7. Block Addresses (x16) Top Boot Block (x16) Address lines A20-A0 000000h 64 KByte or 32 KWord 007FFFh Bank B 0F8000h 64 KByte or 32 KWord 0FFFFFh 100000h 64 KByte or 32 KWord 107FFFh 1F0000h 64 KByte ...

Page 11

... Unlock Bypass Program, I Reset/Block Temporary Unprotect (RP). The Reset/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the memory or to temporarily unprotect all Blocks that have been protected. Note that if V most boot blocks will remain protected even if RP ...

Page 12

... Byte/Word Organization Select (BYTE). The Byte/Word Organization Select pin is used to switch between the x8 and x16 Bus modes of the memory. When Byte/Word Organization Select is Low the memory mode, when High the memory is in x16 mode. IH 12/49 V Supply Voltage (2 ...

Page 13

... They require V Electronic Signature. The memory has two codes, the manufacturer code and the device code, that can be read to identify the memory. These codes can be read by applying the signals listed in Tables 3 and 4, Bus Operations. Block Protect and Chip Unprotect. Groups blocks can be protected against accidental Pro- gram or Erase ...

Page 14

... IH Table 4. Bus Operations, BYTE = V Operation E V Bus Read IL V Bus Write IL Output Disable X V Standby IH Read Manufacturer V IL Code Read Device Code V IL Extended Memory V IL Block Verify Code Note 14/49 IL Address Inputs G W DQ15A–1, A0-A20 V V Cell Address Command Address ...

Page 15

... Common Flash Interface (CFI) memory area. Program Command The Program command can be used to program a value to one address in the memory array at a time. The command requires four Bus Write oper- ations, the final write operation latches the ad- dress and data, and starts the Program/Erase Controller ...

Page 16

... Unlock Bypass Program command can then be is- sued to program addresses within the bank, or the Unlock Bypass Reset command can be issued to return the bank to Read mode. In Unlock Bypass mode the memory can be read Read mode. When V is applied to the V PP the memory automatically enters the Unlock By- pass mode and the Unlock Bypass Program com- mand can be issued immediately ...

Page 17

... Erase Controller has stopped the memory will be set to Read mode and the Erase will be suspend- ed. If the Erase Suspend command is issued dur- ing the period when the memory is waiting for an additional block (before the Program/Erase Con- troller starts) then the Erase is suspended immedi- ately and will start immediately when the Erase Resume Command is issued ...

Page 18

M29DW324DT, M29DW324DB Enter Extended Block Command The M29DW324D has an extra 64KByte block (Extended Block) that can only be accessed using the Enter Extended Block command. Three Bus write cycles are required to issue the Extended Block command. Once the ...

Page 19

Table 6. Commands, 8-bit mode, BYTE = V Command Add 1 Read/Reset 3 AAA Auto Select 3 AAA Program 4 AAA Quadruple Byte Program 5 AAA Unlock Bypass 3 AAA Unlock Bypass Program 2 Unlock Bypass Reset 2 Chip Erase ...

Page 20

... One of the Erase commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’. Erase Timer Bit (DQ3). The Erase Timer Bit can be used to identify the start of Program/Erase Controller operation during a Block Erase com- mand ...

Page 21

Table 8. Status Register Bits Operation Program Bank Address Program During Erase Bank Address Suspend Program Error Bank Address Chip Erase Any Address Erasing Block Block Erase before timeout Non-Erasing Block Erasing Block Block Erase Non-Erasing Block Erasing Block Erase ...

Page 22

... PP 22/49 these or any other conditions above those indicat the Operating sections of this specification is not implied. Refer also to the STMicroelectronics SURE Program and other relevant quality docu- ments. Parameter (1,2) +2V during transition and for less than 20ns during transitions. ...

Page 23

DC AND AC PARAMETERS This section summarizes the operating measure- ment conditions, and the DC and AC characteris- tics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed under the ...

Page 24

M29DW324DT, M29DW324DB Table 12. DC Characteristics Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO (2) Supply Current (Read) I CC1 I Supply Current (Standby) CC2 Supply Current (Program/ (1,2) I CC3 Erase) V Input Low Voltage ...

Page 25

Figure 12. Read Mode AC Waveforms A0-A20/ A– DQ0-DQ7/ DQ8-DQ15 BYTE tELBL/tELBH Table 13. Read AC Characteristics Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Output Valid AVQV ACC ...

Page 26

M29DW324DT, M29DW324DB Figure 13. Write AC Waveforms, Write Enable Controlled A0-A20/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHEL RB Table 14. Write AC Characteristics, Write Enable Controlled Symbol Alt t t Address Valid to Next Address Valid AVAV ...

Page 27

Figure 14. Write AC Waveforms, Chip Enable Controlled A0-A20/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHWL RB Table 15. Write AC Characteristics, Chip Enable Controlled Symbol Alt t t Address Valid to Next Address Valid AVAV WC t ...

Page 28

M29DW324DT, M29DW324DB Figure 15. Reset/Block Temporary Unprotect AC Waveforms tPLPX RP Table 16. Reset/Block Temporary Unprotect AC Characteristics Symbol Alt (1) t PHWL RP High to Write Enable Low, Chip Enable Low PHEL RH ...

Page 29

PACKAGE MECHANICAL Figure 17. 48 Lead Plastic Thin Small Outline, 12x20 mm, Bottom View Package Outline DIE Note: Drawing not to scale. Table 17. 48 Lead Plastic Thin Small Outline, 12x20 mm, Package Mechanical Data ...

Page 30

M29DW324DT, M29DW324DB Figure 18. TFBGA63 7x11mm - 6x8 Ball Array, 0.8mm Pitch, Bottom View Package Outline BALL "A1" Note: Drawing not to scale. Table 18. TFBGA63 7x11mm - 6x8 Ball Array, 0.8mm Pitch, Package Mechanical Data Symbol ...

Page 31

Figure 19. TFBGA48 6x8mm - 6x8 Ball Array, 0.8mm Pitch, Bottom View Package Outline FE BALL "A1" Note: Drawing not to scale. Table 19. TFBGA48 6x8mm - 6x8 Ball Array, 0.8mm Pitch, Package Mechanical Data Symbol Typ A ...

Page 32

... Note: This product is also available with the Extended Block factory locked. For further details and ordering information contact your nearest ST sales office. Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of available options (Speed, Package, etc.) or for further information on any aspect of this device, please contact your nearest ST Sales Office ...

Page 33

APPENDIX A. BLOCK ADDRESSES Table 21. Top Boot Block Addresses, M29DW324DT (Kbytes/ Block Kwords) 0 64/32 1 64/32 2 64/32 3 64/32 4 64/32 5 64/32 6 64/32 7 64/32 8 64/32 9 64/32 10 64/32 11 64/32 12 64/32 ...

Page 34

M29DW324DT, M29DW324DB (Kbytes/ Block Kwords) 32 64/32 33 64/32 34 64/32 35 64/32 36 64/32 37 64/32 38 64/32 39 64/32 40 64/32 41 64/32 42 64/32 43 64/32 44 64/32 45 64/32 46 64/32 47 64/32 48 64/32 49 ...

Page 35

Block Kwords) 63 8/4 64 8/4 65 8/4 66 8/4 67 8/4 68 8/4 69 8/4 70 8/4 Note: 1. Used as the Extended Block Addresses in Extended Block mode. Protection Block (x8) Group Protection Group 3F0000h–3F1FFFh Protection Group ...

Page 36

M29DW324DT, M29DW324DB Table 22. Bottom Boot Block Addresses, M29DW324DB (Kbytes/ Block Kwords) 0 8/4 1 8/4 2 8/4 3 8/4 4 8/4 5 8/4 6 8/4 7 8/4 8 64/32 9 64/32 10 64/32 11 64/32 12 64/32 13 64/32 ...

Page 37

Protection Block Block Kwords) Group 31 64/32 32 64/32 Protection Group 33 64/32 34 64/32 35 64/32 36 64/32 Protection Group 37 64/32 38 64/32 39 64/32 40 64/32 Protection Group 41 64/32 42 64/32 43 64/32 44 64/32 ...

Page 38

M29DW324DT, M29DW324DB (Kbytes/ Block Kwords) 63 64/32 64 64/32 65 64/32 66 64/32 67 64/32 68 64/32 69 64/32 70 64/32 Note: 1. Used as the Extended Block Addresses in Extended Block mode. 38/49 Protection Block (x8) Group 380000h-38FFFFh 390000h-39FFFFh ...

Page 39

... Note: Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’. is read from the memory. Tables 23, 24, 25, 26, 27 and 28 show the addresses used to retrieve the data. The CFI data structure also contains a security area where a 64 bit unique security number is writ- ten (see Table 28, Security Code area) ...

Page 40

M29DW324DT, M29DW324DB Table 25. CFI Query System Interface Information Address Data x16 x8 1Bh 36h 0027h 1Ch 38h 0036h 1Dh 3Ah 00B5h 1Eh 3Ch 00C5h 1Fh 3Eh 0004h 20h 40h 0000h 21h 42h 000Ah 22h 44h 0000h 23h 46h 0004h ...

Page 41

Table 27. Primary Algorithm-Specific Extended Query Table Address Data x16 x8 40h 80h 0050h 41h 82h 0052h 42h 84h 0049h 43h 86h 0031h 44h 88h 0030h 45h 8Ah 0000h 46h 8Ch 0002h 47h 8Eh 0001h 48h 90h 0001h 49h 92h ...

Page 42

... Bit DQ7 is the most significant bit in the Extended Block Verify Code and a specific procedure must be followed to read it. See “Extended Memory Block Verify Code Tables 3 and 4, Bus Opera- ” in tions, BYTE = V ...

Page 43

... RP. This can be achieved without violating the maximum ratings of the components on the micro- processor bus, therefore this technique is suitable for use after the memory has been fitted to the sys- tem. To protect a group of blocks follow the flowchart in Figure 22, In-System Block Protect Flowchart. To ...

Page 44

M29DW324DT, M29DW324DB Figure 20. Programmer Equipment Group Protect Flowchart Note: Block Protection Groups are shown in Appendix D, Tables 21 and 22. 44/49 START ADDRESS = GROUP ADDRESS ...

Page 45

Figure 21. Programmer Equipment Chip Unprotect Flowchart NO = 1000 Note: Block Protection Groups are shown in Appendix D, Tables 21 and 22. START PROTECT ALL GROUPS CURRENT ...

Page 46

M29DW324DT, M29DW324DB Figure 22. In-System Equipment Group Protect Flowchart Note: Block Protection Groups are shown in Appendix D, Tables 21 and 22. 46/49 START WRITE 60h ADDRESS = GROUP ADDRESS ...

Page 47

Figure 23. In-System Equipment Chip Unprotect Flowchart NO = 1000 ISSUE READ/RESET COMMAND Note: Block Protection Groups are shown in Appendix D, Tables 21 and 22. START PROTECT ALL GROUPS CURRENT GROUP = ...

Page 48

... Table 7, Program, Erase Times and Program, Erase Endurance Cycles. Appendix C, EXTENDED MEMORY BLOCK, added. Auto Select Command sued to read the Extended Memory Block. Extended Memory Block Verify Code row added to Tables 3 and 4, Bus Operations, BYTE = V modified in Auto Select Command. Chip Erase Address modified in Table 8, Status Register Bits ...

Page 49

... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics ...

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