CAT24WC02J Catalyst / ON Semiconductor, CAT24WC02J Datasheet - Page 2

• Manufacturer Part Number: CAT24WC02J
• Description: EEPROM (256x8) 2k 2.5-6.0
• Manufacturer: Catalyst / ON Semiconductor

Specifications of CAT24WC02J

• Memory Size: 2 Kbit
• Organization: 256 K x 8
• Interface Type: I2C
• Maximum Clock Frequency: 0.1 MHz
• Access Time: 3500 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2.5 V
• Maximum Operating Current: 3 mA
• Maximum Operating Temperature: + 70 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Minimum Operating Temperature: 0 C
• Operating Supply Voltage: 2.5 V, 6 V
• Operating Temperature: 0 C to + 70 C
• Lead Free Status / Rohs Status: No

CAT24WC01/02/04/08/16
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias ................. –55 C to +125 C
Storage Temperature ....................... –65 C to +150 C
Voltage on Any Pin with
V
Package Power Dissipation
Lead Soldering Temperature (10 secs) ............ 300 C
Output Short Circuit Current
RELIABILITY CHARACTERISTICS
CAPACITANCE T
Note:
(1) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
(2) Output shorted for no more than one second. No more than one output shorted at a time.
(3) These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC-Q100
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1V to V
(5) Maximum standby current (I
D.C. OPERATING CHARACTERISTICS
V
Doc. No. 1022, Rev. N
Not Recommended for New Design,
Replace with CAT24C01
CC
CC
Symbol
Symbol
Symbol
N
T
V
I
LTH
voltage on output pins is V
and JEDEC test methods.
Respect to Ground
Capability (Ta = 25 C) ................................... 1.0W
I
DR
V
V
ZAP
C
C
END
SB
with Respect to Ground ............... –2.0V to +7.0V
V
= +1.8V to +5.5V, unless otherwise specified.
I
I
V
I
CC
LO
OL1
OL2
I/O
IN
LI
IH
IL
(3)
(3)(4)
(5)
(3)
(3)
(3)
(3)
Input/Output Capacitance (SDA)
Input Capacitance (A0, A1, A2, SCL, WP)
Power Supply Current
Standby Current (V
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage (V
Output Low Voltage (V
Endurance
Data Retention
ESD Susceptibility
Latch-up
A
= 25 C, f = 1.0 MHz, V
(1)
Parameter
Parameter
CC
........... –2.0V to +V
SB
+0.5V, which may overshoot to V
) = 10 A for the Automotive and Extended Automotive temperature range.
(2)
........................ 100mA
Test
CC
= 5.0V)
CC
CC
= 3.0V)
= 1.8V)
CC
CC
= 5V
+ 2.0V
V
CC
Min.
1,000,000
–1
x 0.7
CC
2000
Min.
100
100
+ 2.0V for periods of less than 20ns.
2
Limits
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of
the device at these or any other conditions outside of those
listed in the operational sections of this specification is not
implied. Exposure to any absolute maximum rating for
extended periods may affect device performance and
reliability.
Max.
Typ.
8
6
V
V
CC
CC
Max.
0.4
0.5
Max.
10
10
3
1
x 0.3
+ 0.5
Units
pF
pF
CC
+1V.
Units
Characteristics subject to change without notice
mA
V
V
V
V
A
A
A
V
Cycles/Byte
V
V
Test Conditions
OUT
Conditions
f
IN
© Catalyst Semiconductor, Inc.
IN
SCL
Years
V
Units
I
V
Volts
OL
I
mA
= GND or V
= GND to V
I/O
OL
IN
= GND to V
= 100 KHz
= 1.5 mA
= 0V
= 0V
= 3 mA
CC
CC
CC