CY7C1347F-133AI Cypress Semiconductor Corp, CY7C1347F-133AI Datasheet - Page 8

• Manufacturer Part Number: CY7C1347F-133AI
• Description: SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 4ns 100-Pin TQFP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1347F-133AI

• Package: 100TQFP
• Timing Type: Synchronous
• Density: 4.5 Mb
• Data Rate Architecture: SDR
• Typical Operating Supply Voltage: 3.3 V
• Address Bus Width: 17 Bit
• Number Of I/o Lines: 36 Bit
• Number Of Ports: 1
• Number Of Words: 128K

Document #: 38-05213 Rev. *D
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ..................................... −65°C to +150°C
Ambient Temperature with
Power Applied.................................................. −55°C to +125°C
Supply Voltage on V
DC Voltage Applied to Outputs
in High-Z State ........................................... −0.5V to V
DC Input Voltage ....................................... −0.5V to V
Electrical Characteristics
V
V
V
V
V
V
I
I
I
I
I
Notes:
Parameter
X
OZ
DD
SB1
SB2
8. Overshoot: V
9. T
DD
DDQ
OH
OL
IH
IL
Power-up
: Assumes a linear ramp from 0v to V
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current ex-
cept ZZ and MODE
Input Current of MODE Input = V
Input Current of ZZ
Output Leakage Current GND ≤ V
V
Current
Automatic CE
Power-down
Current—TTL Inputs
Automatic CE
Power-down
Current—CMOS Inputs
IH
DD
(AC) < V
Operating Supply
Description
DD
DD
Relative to GND.........−0.5V to +4.6V
+1.5V (Pulse width less than t
[8]
[8]
Over the Operating Range
V
V
V
V
V
V
V
V
GND ≤ V
Input = V
Input = V
Input = V
V
f = f
Max. V
V
f = f
Max. V
V
= 0
DD
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DD
IN
IN
(min.) within 200ms. During this time V
MAX
MAX
≥ V
≤ 0.3V or V
= Max., I
= 3.3V, V
= 2.5V, V
= 3.3V, V
= 2.5V, V
= 3.3V
= 2.5V
= 3.3V
= 2.5V
DD
DD
IH
= 1/t
= 1/t
CYC
I
I
SS
DDQ
SS
DDQ
, Device Deselected,
, Device Deselected,
or V
≤ V
≤ V
DD
DD
/2), undershoot: V
CYC
CYC
OUT
DDQ
DDQ,
IN
+ 0.5V
+ 0.5V
IN
DD
DD
DD
DD
≤ V
> V
= 0 mA,
= Min., I
= Min., I
= Min., I
= Min., I
Output Disabled
IL
Test Conditions
DDQ
[8, 9]
– 0.3V, f
IL
OH
OH
OL
OL
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
(AC) > -2V (Pulse width less than t
Com’l
Ind’l
Range
= 8.0 mA
= 2.0 mA
= –4.0 mA
= –2.0 mA
IH
< V
7.5-ns cycle, 133 MHz
7.5-ns cycle, 133 MHz
All speeds
4-ns cycle, 250 MHz
4.4-ns cycle, 225 MHz
5-ns cycle, 200 MHz
6-ns cycle, 166 MHz
4-ns cycle, 250 MHz
4.4-ns cycle, 225 MHz
5-ns cycle, 200 MHz
6-ns cycle, 166 MHz
–40°C to +85°C
DD
Temperature
0°C to +70°C
and V
Ambient
DDQ
< V
DD
CYC
3.3V −5%/+10%
/2).
3.135
2.375
Min.
–0.3
–0.3
−30
2.4
2.0
2.0
1.7
V
−5
−5
−5
DD
CY7C1347F
V
V
DD
DD
Max.
V
325
290
265
240
225
120
100
115
110
3.6
0.4
0.7
0.8
0.7
30
90
40
+ 0.3V
+ 0.3V
DD
5
5
5
Page 8 of 19
2.5V −5%
to V
V
DDQ
DD
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V