HN1B01FU-GR Toshiba Flat Panel/Mass Storage, HN1B01FU-GR Datasheet - Page 2

• Manufacturer Part Number: HN1B01FU-GR
• Description: Trans GP BJT NPN/PNP 50V 0.15A 6-Pin US
• Manufacturer: Toshiba Flat Panel/Mass Storage
• Type: NPN|PNPr

Specifications of HN1B01FU-GR

• Package: 6US
• Supplier Package: US
• Pin Count: 6
• Minimum Dc Current Gain: 200@2mA@6V
• Maximum Operating Frequency: 150(Typ)@NPN|120(Typ)@PNP MHz
• Maximum Dc Collector Current: 0.15 A
• Maximum Collector Emitter Saturation Voltage: 0.25@10mA@100mA@NPN|0.3@10mA@100mA@PNP V
• Maximum Collector Base Voltage: 60@NPN|50@PNP V
• Maximum Collector Emitter Voltage: 50 V
• Maximum Emitter Base Voltage: 5 V

Q1,Q2 Common Absolute Maximum Ratings
Q1
Q2
Note:
* Total rating
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Transition frequency
Collector output capacitance
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Transition frequency
Collector output capacitance
Note: h
Collector power dissipation
Junction temperature
Storage temperature range
Electrical Characteristics
Electrical Characteristics
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
FE
Characteristic
Characteristic
Characteristic
Classification Y (Y): 120~240, GR (G): 200~400
( ) Marking Symbol
h
h
(Ta = 25°C)
V
(Ta = 25°C)
V
Symbol
Symbol
Symbol
FE (Note)
FE (Note)
CE (sat)
CE (sat)
I
I
I
I
P
T
C
C
CBO
EBO
CBO
EBO
T
f
f
stg
C
T
ob
T
ob
j
*
Circuit
Circuit
Test
Test
―
―
―
―
―
―
―
―
―
―
―
―
−55~125
Rating
200
125
2
V
V
V
I
V
V
f = 1MHz
V
V
V
I
V
V
f = 1MHz
C
C
CB
EB
CE
CE
CB
CB
EB
CE
CE
CB
= −100mA, I
= 100mA, I
(Ta
= −5V, I
= 5V, I
= −50V, I
= −6V, I
= −10V, I
= −10V, I
= 60V, I
= 6V, I
= 10V, I
= 10V, I
Test Condition
Test Condition
=
C
C
25°C)
Unit
mW
°C
°C
C
E
C
E
C
= 0
= 2mA
B
E
C
E
= 0
= 0,
= 0
= −2mA
= 1mA
B
= 10mA
= 0
= −1mA
= 0,
= −10mA
120
120
Min
Min
―
―
―
―
―
―
―
―
―
―
−0.1
Typ.
Typ.
120
150
0.1
―
―
―
―
―
―
4
2
HN1B01FU
2007-11-01
−0.1
−0.1
−0.3
Max
Max
0.25
400
400
0.1
0.1
―
―
―
―
MHz
MHz
Unit
Unit
μA
μA
μA
μA
pF
pF
V
V