HN1B01FU-GR Toshiba Flat Panel/Mass Storage, HN1B01FU-GR Datasheet - Page 4

• Manufacturer Part Number: HN1B01FU-GR
• Description: Trans GP BJT NPN/PNP 50V 0.15A 6-Pin US
• Manufacturer: Toshiba Flat Panel/Mass Storage
• Type: NPN|PNPr

Specifications of HN1B01FU-GR

• Package: 6US
• Supplier Package: US
• Pin Count: 6
• Minimum Dc Current Gain: 200@2mA@6V
• Maximum Operating Frequency: 150(Typ)@NPN|120(Typ)@PNP MHz
• Maximum Dc Collector Current: 0.15 A
• Maximum Collector Emitter Saturation Voltage: 0.25@10mA@100mA@NPN|0.3@10mA@100mA@PNP V
• Maximum Collector Base Voltage: 60@NPN|50@PNP V
• Maximum Collector Emitter Voltage: 50 V
• Maximum Emitter Base Voltage: 5 V

HN1B01FU
Q2
(NPN transistor)
4
2007-11-01