FW907-TL-E ON Semiconductor, FW907-TL-E Datasheet

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FW907-TL-E

Manufacturer Part Number
FW907-TL-E
Description
MOSFET N/P-CH 30V 10A 8SOP
Manufacturer
ON Semiconductor
Series
-r
Datasheet

Specifications of FW907-TL-E

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
-
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
1000pF @ 10V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.173", 4.40mm Width)
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FW907-TL-E
Manufacturer:
ON Semiconductor
Quantity:
800
Ordering number : ENA1810
FW907
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7005A-003
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10s)
Drain Current (PW≤100ms)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
ON-resistance Nch: R DS (on)1=13m Ω (typ.), Pch: R DS (on)1=20m Ω (typ.)
4V drive
N-channel MOSFET + P-channel MOSFET
Parameter
1
8
1.27
5.0
5
4
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
0.43
V DSS
V GSS
I D
I D
I D
I DP
P D
P T
Tch
Tstg
0.2
Symbol
http://semicon.sanyo.com/en/network
0.1
SANYO Semiconductors
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
Duty cycle≤1%
Duty cycle≤1%
Duty cycle≤1%
When mounted on ceramic substrate (2000mm
When mounted on ceramic substrate (2000mm
FW907
Conditions
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type : TL
Electrical Connection
2
×0.8mm) 1unit, PW≤10s
2
×0.8mm), PW≤10s
8
1
TL
7
2
72810PA TK IM TC-00002249
DATA SHEET
6
3
N-channel
5
4
--55 to +150
11.5
±20
30
10
24
52
: SOP8
: SC-87, SOT96
150
2.3
2.5
Marking
P-channel
W907
--30
±20
--19
--52
LOT No.
--8
--9
No. A1810-1/6
Unit
°C
°C
W
W
A
A
A
A
V
V

Related parts for FW907-TL-E

FW907-TL-E Summary of contents

Page 1

... Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Package Dimensions unit : mm (typ) 7005A-003 5 1.27 0.43 FW907 SANYO Semiconductors Symbol Conditions V DSS V GSS Duty cycle≤ Duty cycle≤ Duty cycle≤ When mounted on ceramic substrate (2000mm ...

Page 2

... Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage FW907 Symbol Conditions V (BR)DSS I D =1mA =0V I DSS V DS =30V =0V I GSS V GS =±16V = (off) ...

Page 3

... IT15843 [Nch] 50 Ta=25° --60 --40 --20 IT15845 --15V -- =1.87Ω OUT G FW907 50Ω =10V 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate-to-Source Voltage (on 100 Ambient Temperature ° C No. A1810-3/6 [Nch] 4.0 4.5 IT15844 [Nch] 120 140 ...

Page 4

... Drain Current =15V =10A Total Gate Charge --8 --7 --6 --5 --4 --3 --2 -- --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 Drain-to-Source Voltage FW907 [Nch 0.2 10 IT15847 [Nch =15V =10V 1000 100 IT15849 [Nch] 100 1 Operation in this 3 area is limited (on). ...

Page 5

... Drain Current Time -- 100 --0.1 --1.0 Drain Current -- --15V -- --8A --8 --7 --6 --5 --4 --3 --2 -- Total Gate Charge FW907 [Pch] 70 Ta=25° --12 --14 --16 --60 --40 --20 IT15855 [Pch --10V 2 -- --1 --0 --0. --0.2 --10 IT15857 [Pch --15V --10V 2 1000 100 --10 IT15859 [Pch] ...

Page 6

... Ambient Temperature °C Note on usage : Since the FW907 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any " ...

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