BLF7G10LS-250,112 NXP Semiconductors, BLF7G10LS-250,112 Datasheet
BLF7G10LS-250,112
Specifications of BLF7G10LS-250,112
Related parts for BLF7G10LS-250,112
BLF7G10LS-250,112 Summary of contents
Page 1
... BLF7G10L-250; BLF7G10LS-250 Power LDMOS transistor Rev. 1 — 25 February 2011 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier. ...
Page 2
... NXP Semiconductors 2. Pinning information Table 2. Pin BLF7G10L-250 (SOT502A BLF7G10LS-250 (SOT502B [1] Connected to flange 3. Ordering information Table 3. Type number BLF7G10L-250 BLF7G10LS-250 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg Thermal characteristics Table 5. Symbol R th(j-c) BLF7G10L-250_7G10LS-250 Objective data sheet BLF7G10L-250 ...
Page 3
... Mode of operation: 1-carrier W-CDMA; PAR = 7 0.01 % probability on the CCDF; 3GPP test model 1; 64 DPCH; f unless otherwise specified class-AB production test circuit. Symbol PAR O 7.1 Ruggedness in class-AB operation The BLF7G10L-250 and BLF7G10LS-250 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions BLF7G10L-250_7G10LS-250 Objective data sheet BLF7G10L-250 ...
Page 4
... Impedance information Table 2000 mA; main transistor and (MHz) 925 942 960 Fig 1. BLF7G10L-250_7G10LS-250 Objective data sheet BLF7G10L-250; BLF7G10LS-250 Typical impedance information = defined in Figure (Ω) 3.46 − j3.57 3.55 − j3.64 3.77 − j4.88 gate Definition of transistor impedance All information provided in this document is subject to legal disclaimers. ...
Page 5
... UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.505 0.186 0.006 0.788 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502A Fig 2. Package outline SOT502A BLF7G10L-250_7G10LS-250 Objective data sheet BLF7G10L-250; BLF7G10LS-250 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9.30 9 ...
Page 6
... UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.505 0.186 0.006 0.788 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502B Fig 3. Package outline SOT502B BLF7G10L-250_7G10LS-250 Objective data sheet BLF7G10L-250; BLF7G10LS-250 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9.30 9 ...
Page 7
... VSWR W-CDMA 10. Revision history Table 11. Revision history Document ID BLF7G10L-250_7G10LS-250 v.1 20110225 BLF7G10L-250_7G10LS-250 Objective data sheet BLF7G10L-250; BLF7G10LS-250 Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Continuous Wave Dedicated Physical CHannel ElectroStatic Discharge Laterally Diffused Metal Oxide Semiconductor Laterally Diffused Metal Oxide Semiconductor Transistor ...
Page 8
... BLF7G10L-250_7G10LS-250 Objective data sheet BLF7G10L-250; BLF7G10LS-250 [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
Page 9
... For sales office addresses, please send an email to: BLF7G10L-250_7G10LS-250 Objective data sheet BLF7G10L-250; BLF7G10LS-250 NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
Page 10
... Trademarks Contact information Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 BLF7G10L-250; BLF7G10LS-250 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Power LDMOS transistor All rights reserved ...