BLF7G10LS-250,112 NXP Semiconductors, BLF7G10LS-250,112 Datasheet - Page 3

• Manufacturer Part Number: BLF7G10LS-250,112
• Manufacturer: NXP Semiconductors

Specifications of BLF7G10LS-250,112

• Lead Free Status / Rohs Status: Supplier Unconfirmed

NXP Semiconductors
6. Characteristics
7. Test information
BLF7G10L-250_7G10LS-250
Objective data sheet
7.1 Ruggedness in class-AB operation
Table 6.
T
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on the CCDF; 3GPP test
model 1; 64 DPCH; f
V
circuit.
Table 8.
Mode of operation: 1-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on the CCDF; 3GPP test
model 1; 64 DPCH; f
unless otherwise specified; in a class-AB production test circuit.
The BLF7G10L-250 and BLF7G10LS-250 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
Symbol Parameter
V
V
I
I
I
g
R
Symbol
P
G
RL
η
ACPR
Symbol
PAR
DSS
DSX
GSS
j
DS
DS
fs
D
(BR)DSS
GS(th)
L(AV)
DS(on)
p
= 25
in
= 30 V; I
O
= 30 V; I
°
C unless otherwise specified.
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
Parameter
output peak-to-average ratio
Characteristics
Functional test information
PAR performance
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
Dq
Dq
= 2000 mA; T
= 2000 mA; P
All information provided in this document is subject to legal disclaimers.
1
1
= 920 MHz; f
= 960 MHz; RF performance at V
BLF7G10L-250; BLF7G10LS-250
Rev. 1 — 25 February 2011
case
L
= 25
= 200 W (CW); f = 920 MHz to 960 MHz.
2
= 925 MHz; f
°
C; unless otherwise specified; in a class-AB production test
Conditions
P
probability on CCDF
Conditions
V
V
V
V
V
V
I
D
L(AV)
GS
DS
GS
GS
DS
GS
DS
GS
= 9.45 A
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
Conditions
P
P
P
P
3
= 100 W at 0.01 %
L(AV)
L(AV)
L(AV)
L(AV)
= 955 MHz; f
GS(th)
GS(th)
DS
= 60 W
= 60 W
= 60 W
= 60 W
D
DS
D
D
= 2.7 mA
+ 3.75 V;
DS
+ 3.75 V;
= 30 V; I
= 270 mA
= 13.5 A
= 28 V
= 0 V
4
= 960 MHz; RF performance at
Dq
Min
-
-
-
-
-
Power LDMOS transistor
= 2000 mA; T
Min
-
-
-
-
-
-
-
Min Typ Max Unit
-
Typ
60
19
−10
30
−32
© NXP B.V. 2011. All rights reserved.
Typ
67
1.9
-
49
-
19.3
0.048 -
4.6
case
Max
-
-
-
-
-
Max
-
-
-
-
-
-
-
= 25
W
Unit
dB
dB
%
dBc
°
3 of 10
dB
C;
Unit
V
V
μA
A
nA
S
Ω