CY8C5367AXI-108 Cypress Semiconductor Corp, CY8C5367AXI-108 Datasheet - Page 91

• Manufacturer Part Number: CY8C5367AXI-108
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY8C5367AXI-108

• Lead Free Status / Rohs Status: Compliant

11.7.2 EEPROM
Table 11-53. EEPROM DC Specifications
Table 11-54. EEPROM AC Specifications
11.7.3 SRAM
Table 11-55. SRAM DC Specifications
Table 11-56. SRAM AC Specifications
Document Number: 001-66237 Rev. *A
T
V
F
Parameter
Parameter
Parameter
Parameter
WRITE
SRAM
SRAM
Erase and program voltage
Single row erase/write cycle time
EEPROM data retention time, retention
period measured from last erase cycle
SRAM retention voltage
SRAM operating frequency
Description
Description
Description
Description
PRELIMINARY
Average ambient temp, T
1M erase/program cycles
Average ambient temp, T
100 K erase/program cycles
Average ambient temp. T
10 K erase/program cycles
Conditions
Conditions
Conditions
Conditions
PSoC
A
A
A
≤ 25 °C,
≤ 55 °C,
≤ 85 °C,
®
5: CY8C53 Family Datasheet
Min
Min
Min
Min
2.7
1.2
DC
20
20
10
–
Typ
Typ
Typ
Typ
–
–
–
–
–
–
2
67.01
Max
Max
Max
Max
5.5
20
–
–
–
–
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Units
Units
years
Units
Units
MHz
ms
V
V
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