PM5050J HITACHI, PM5050J Datasheet - Page 3

• Manufacturer Part Number: PM5050J
• Manufacturer: HITACHI

Electrical Characteristics (Ta = 25°C) (Per FET chip)
Item
Drain to source breakdown
voltage
Gate to source leak current
Gate to source breakdown
voltage
Drain leak current
Gate to source threshold
voltage
Drain to source saturation
voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note:
Mechanical Characteristics
Item
Fixing strength
Weight
1. Pulse Test
Symbol
—
—
—
Symbol
V
I
V
I
V
V
R
|y
Ciss
Coss
Crss
t
t
t
t
V
t
Condition
Mounting into main-terminal with M4 screw
Mounting into heat sink with M5 screw
Typical value
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(th)
DS(on)
DS(on)
DF
fs
|
Min
500
—
±30
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
3.5
0.14
30
6600
1550
250
45
270
250
140
1.6
130
Max
—
±10
—
500
3.0
4.5
0.18
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
V
µA
V
V
S
pF
ns
V
ns
Test conditions
I
V
I
V
I
I
I
I
V
f = 1 MHz
I
Rg = 50
R
I
I
di/dt = 100 A/µs
D
G
D
D
D
D
D
F
F
GS
DS
DS
L
Rating
1.45 to 1.95
1.95 to 2.9
200
= 50 A, V
= 50 A, V
= 10 mA, V
= ±100 µA, V
= 1 mA, V
= 25 A, V
= 25 A, V
= 25 A, V
= 25 A, V
= 1.2
= ± 25 V, V
= 400 V, V
= 10 V, V
PM5050J
GS
GS
GS
GS
DS
GS
DS
GS
GS
= 0 V
= 0 V
= 10 V*
= 10 V*
= 10 V*
= 10 V
GS
= 10 V
DS
DS
= 0 V
= 0 V
= 0 V
= 0 V
Unit
N-m
N-m
g
= 0 V
1
1
1
3