TEA6321T/V1,518 NXP Semiconductors, TEA6321T/V1,518 Datasheet - Page 24

• Manufacturer Part Number: TEA6321T/V1,518
• Description: IC SOUND FADER CONTROL 32-SOIC
• Manufacturer: NXP Semiconductors
• Type: Sound Fader Control Circuitr

Specifications of TEA6321T/V1,518

• Applications: Radio
• Mounting Type: Surface Mount
• Package / Case: 32-SOIC (7.5mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 935079510518; TEA6321T/V1-T; TEA6321T/V1-T

Philips Semiconductors
If the 20 dB gain is not required for the maximum volume
position, it will be an advantage to use the maximum boost
gain and then increased attenuation in the last section,
Volume II.
1995 Dec 19
Sound fader control circuit
a. Gain volume I = 20 dB (G
b. Gain volume I = 20 dB (G
v(max)
v(max)
); gain volume II = 0 dB; fader and balance range = 55 dB.
); gain volume II = 6 dB global setting; fader and balance range now 49 dB, previously 55 dB.
handbook, halfpage
V I(min) = 200 mV
handbook, halfpage
V I(min) = 200 mV
TEA6321
TEA6321
Fig.11 Level diagram.
V o = 2 V for P (max)
V o = 1 V for P (max)
24
a.
b.
Therefore the loudness will be at the correct place and a
lower noise and offset voltage will be achieved.
POWER STAGE
POWER STAGE
G = 20 dB
G = 26 dB
P (max) = 100 W at 4
P (max) = 100 W at 4
MBE910
MED842
Preliminary specification
TEA6321