TEA6321T/V1,518 NXP Semiconductors, TEA6321T/V1,518 Datasheet - Page 9

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TEA6321T/V1,518

Manufacturer Part Number
TEA6321T/V1,518
Description
IC SOUND FADER CONTROL 32-SOIC
Manufacturer
NXP Semiconductors
Type
Sound Fader Control Circuitr
Datasheet

Specifications of TEA6321T/V1,518

Applications
Radio
Mounting Type
Surface Mount
Package / Case
32-SOIC (7.5mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
935079510518
TEA6321T/V1-T
TEA6321T/V1-T
Philips Semiconductors
1995 Dec 19
MUTE
V
Volume I control and loudness
CR
G
G
L
Bass control
G
G
V
Treble control
G
G
V
Volume II, balance and fader control
CR
G
Bmax
G
G
offset
offset
offset
Sound fader control circuit
v
step
bass
step
treble
step
step
SYMBOL
a
t
vol
att
attenuator set error
gain tracking error
mute attenuation
DC step offset between any
adjoining step
DC step offset between any step to
mute
continuous volume control range
voltage gain
step resolution
maximum loudness boost
bass control, maximum boost
maximum attenuation
step resolution (toggle switching)
step error between any adjoining
step
DC step offset in any bass position
treble control, maximum boost
maximum attenuation
maximum boost
step resolution (toggle switching)
step error between any adjoining
step
DC step offset in any treble
position
continuous attenuation fader and
volume control range
step resolution
attenuation set error
PARAMETER
G
G
G
see Fig.10
G
G
G
loudness on; referred to
loudness off; boost is
determined by external
components
f = 46 Hz
f = 46 Hz
f = 46 Hz
f = 46 Hz
f = 15 kHz
f = 15 kHz
f
f = 15 kHz
f = 15 kHz
v
v
v
v
v
v
f = 40 Hz
f = 10 kHz
15 kHz
= +20 to 50 dB
= 51 to 66 dB
= +20 to 50 dB
= 0 to 66 dB
= 20 to 0 dB
= 0 to 66 dB
9
CONDITIONS
100
16
16
11
11
53.5
MIN.
31
110
0.2
2
51
1
17
4.5
18
18
1.8
12
12
1.5
55
1
Preliminary specification
TYP.
TEA6321
2
3
2
10
15
10
+20
19
19
0.5
20
13
13
15
0.5
10
56.5
2
1.5
MAX.
dB
dB
dB
dB
mV
mV
mV
dB
dB
dB
dB
dB
dB
dB
dB
dB
mV
dB
dB
dB
dB
dB
mV
dB
dB
dB
UNIT

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