BYV32E-100 NXP Semiconductors, BYV32E-100 Datasheet - Page 3

• Manufacturer Part Number: BYV32E-100
• Description: Dual ultrafast power diode in a SOT78 (TO-220AB) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BYV32E-100_4
Product data sheet
Symbol
V
V
V
I
I
I
I
I
T
T
V
O(AV)
FRM
FSM
RRM
RSM
Fig 1.
stg
j
RRM
RWM
R
ESD
P
(W)
tot
12
8
4
0
average forward current; sinusoidal waveform;
maximum values
Forward power dissipation as a function of
0
Limiting values
Parameter
repetitive peak reverse
voltage
crest working reverse
voltage
reverse voltage
average output current
repetitive peak forward
current
non-repetitive peak
forward current
repetitive peak reverse
current
non-repetitive peak
reverse current
storage temperature
junction temperature
electrostatic discharge
voltage
4.0
4
2.8
2.2
1.9
a = 1.57
8
Conditions
DC
square-wave pulse; δ = 0.5; T
diodes conducting; see
δ = 0.5; t
t
diode
t
diode
δ = 0.001; t
t
HBM; C = 250 pF; R = 1.5 kΩ; all pins
p
p
p
= 8.3 ms; sine-wave pulse; T
= 10 ms; sine-wave pulse; T
= 100 µs
I
F(AV)
003aac978
(A)
p
= 25 µs; T
p
12
Rev. 04 — 2 March 2009
= 2 µs
mb
≤ 115 °C; per diode
Figure
Fig 2.
Dual rugged ultrafast rectifier diode, 20 A, 100 V
mb
P
(W)
j(init)
1; see
j(init)
tot
15
10
≤ 115 °C; both
5
0
average forward current; square waveform;
maximum values
Forward power dissipation as a function of
0
= 25 °C; per
= 25 °C; per
Figure 2
0.1
5
0.2
BYV32E-100
0.5
Min
-
-
-
-
-
-
-
-
-
-40
-
-
10
I
F(AV)
© NXP B.V. 2009. All rights reserved.
δ = 1
003aac979
Max
100
100
100
20
20
137
125
0.2
0.2
150
150
8
(A)
15
Unit
V
V
V
A
A
A
A
A
A
°C
°C
kV
3 of 9