BYV32E-100 NXP Semiconductors, BYV32E-100 Datasheet - Page 4

• Manufacturer Part Number: BYV32E-100
• Description: Dual ultrafast power diode in a SOT78 (TO-220AB) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
6. Characteristics
Table 6.
BYV32E-100_4
Product data sheet
Symbol
R
R
Symbol
Static characteristics
V
I
Dynamic characteristics
Q
t
V
R
rr
Fig 3.
F
FR
th(j-mb)
th(j-a)
r
Transient thermal impedance from junction to mounting base as a function of pulse width
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to mounting
base
thermal resistance from
junction to ambient
Parameter
forward voltage
reverse current
recovered charge
reverse recovery time
forward recovery
voltage
Z
(K/W)
th(j-mb)
10
10
10
Conditions
with heatsink compound; both diodes
conducting
with heatsink compound; per diode; see
Figure 3
Conditions
I
I
V
V
I
T
I
ramp recovery; T
I
current = 0.25 A; step recovery; T
see
I
Figure 7
F
F
F
F
F
F
10
−1
−2
−3
j
R
R
1
10
= 8 A; T
= 20 A; T
= 2 A; V
= 1 A; V
= 0.5 A; I
= 1 A; dI
= 25 °C
= 100 V; T
= 100 V; T
−6
Figure 6
10
−5
j
R
R
F
= 150 °C; see
R
j
/dt = 10 A/µs; T
= 30 V; dI
= 30 V; dI
= 25 °C
Rev. 04 — 2 March 2009
= 1 A; measured at reverse
10
j
j
= 100 °C
= 25 °C
−4
j
= 25 °C; see
10
−3
F
F
/dt = 20 A/µs;
/dt = 100 A/µs;
10
Figure 4
P
−2
j
= 25 °C; see
Dual rugged ultrafast rectifier diode, 20 A, 100 V
10
t
Figure 5
p
j
−1
T
= 25 °C;
003aac980
δ =
1
t
p
T
(s)
t
t
p
10
Min
-
-
-
Min
-
-
-
-
-
-
-
-
BYV32E-100
Typ
-
-
60
Typ
0.72
1
0.2
6
8
20
10
-
© NXP B.V. 2009. All rights reserved.
Max
1.6
2.4
-
Max
0.85
1.15
0.6
30
12.5
25
20
1
Unit
K/W
K/W
K/W
Unit
V
V
mA
µA
nC
ns
ns
V
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