PMEG3020BEP NXP Semiconductors, PMEG3020BEP Datasheet - Page 6

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD128 small and flat leadSurface-Mounted Device (SMD) plastic package

PMEG3020BEP

Manufacturer Part Number
PMEG3020BEP
Description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD128 small and flat leadSurface-Mounted Device (SMD) plastic package
Manufacturer
NXP Semiconductors
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
PMEG3020BEP
Manufacturer:
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Quantity:
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Part Number:
PMEG3020BEP
Manufacturer:
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Quantity:
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NXP Semiconductors
PMEG3020BEP_1
Product data sheet
Fig 4.
Fig 6.
(A)
I
(1) T
(2) T
(3) T
(4) T
(5) T
10
10
10
10
F
10
1
1
2
3
4
0.0
Forward current as a function of forward
voltage; typical values
f = 1 MHz; T
Diode capacitance as a function of reverse voltage; typical values
j
j
j
j
j
= 150 C
= 125 C
= 85 C
= 25 C
= 40 C
0.1
(1)
(2)
(3)
0.2
amb
(4)
= 25 C
0.3
(5)
0.4
(pF)
C
700
600
500
400
300
200
100
d
0.5
0
0
006aab781
V
0.6
F
(V)
Rev. 01 — 16 October 2009
0.7
10
Fig 5.
20
(A)
I
10
10
10
10
10
10
10
10
(1) T
(2) T
(3) T
(4) T
R
1
2
3
4
5
6
7
8
0
Reverse current as a function of reverse
voltage; typical values
V
2 A low V
j
j
j
j
R
006aab783
= 125 C
= 85 C
= 25 C
= 40 C
(V)
30
F
10
MEGA Schottky barrier rectifier
PMEG3020BEP
(1)
(3)
(4)
(2)
20
© NXP B.V. 2009. All rights reserved.
V
R
006aab782
(V)
30
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