2N7002PV NXP Semiconductors, 2N7002PV Datasheet - Page 2

• Manufacturer Part Number: 2N7002PV
• Description: Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
2N7002PV
Product data sheet
Table 2.
Table 3.
Table 4.
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
4
5
6
Type number Package
2N7002PV
Type number
2N7002PV
Symbol
Per transistor
V
V
I
I
D
DM
DS
GS
Symbol
S1
G1
D2
S2
G2
D1
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
Pinning
Ordering information
Marking codes
Limiting values
Name
-
All information provided in this document is subject to legal disclaimers.
Description
source1
gate1
drain2
source2
gate2
drain1
Rev. 1 — 5 August 2010
Description
plastic surface-mounted package; 6 leads
T
T
V
Conditions
T
single pulse; t
amb
amb
amb
GS
T
T
amb
amb
= 10 V
= 25 °C
= 25 °C
= 25 °C;
= 25 °C
= 100 °C
Marking code
ZF
Simplified outline
60 V, 350 mA N-channel Trench MOSFET
p
≤ 10 μs
1
6
2
5
4
3
[1]
Min
-
-
-
-
-
Graphic symbol
2N7002PV
© NXP B.V. 2010. All rights reserved.
Max
60
±20
350
250
1.2
D
S
1
1
G
1
Version
SOT666
D
S
Unit
V
V
mA
mA
A
2
2
msd901
G
2 of 16
2