2N7002PV NXP Semiconductors, 2N7002PV Datasheet - Page 4

• Manufacturer Part Number: 2N7002PV
• Description: Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Thermal characteristics
2N7002PV
Product data sheet
Fig 3.
(A)
I
10
10
10
(1) t
(2) t
(3) t
(4) DC; T
(5) t
(6) DC; T
D
10
−1
−2
−3
1
10
I
Per transistor: Safe operating area; junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
−1
DM
p
p
p
p
= 100 μs
= 1 ms
= 10 ms
= 100 ms
= single pulse
sp
amb
= 25 °C
= 25 °C; drain mounting pad 1 cm
Table 6.
[1]
[2]
Symbol
Per transistor
R
R
Per device
R
th(j-a)
th(j-sp)
th(j-a)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
thermal resistance from
junction to ambient
All information provided in this document is subject to legal disclaimers.
1
2
Rev. 1 — 5 August 2010
Conditions
in free air
in free air
60 V, 350 mA N-channel Trench MOSFET
10
[1]
[2]
[1]
V
DS
Min
-
-
-
-
(V)
2N7002PV
Typ
330
280
-
-
© NXP B.V. 2010. All rights reserved.
017aaa063
(1)
(2)
(3)
(4)
(5)
(6)
Max
380
320
115
250
10
2
.
2
Unit
K/W
K/W
K/W
K/W
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