PSMN8R0-30YL NXP Semiconductors, PSMN8R0-30YL Datasheet - Page 10

• Manufacturer Part Number: PSMN8R0-30YL
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Package outline
Fig 18. Package outline SOT669 (LFPAK; Power-SO8)
PSMN8R0-30YL
Product data sheet
Plastic single-ended surface-mounted package (LFPAK; Power-SO8); 4 leads
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
UNIT
mm
H
OUTLINE
VERSION
SOT669
L 1
L 2
D
1.20
1.01
A
0.15
0.00
A 1
1.10
0.95
A 2
1
e
0.25
A 3
IEC
2
b 2
E
0.50
0.35
b
1/2
4.41
3.62
e
3
b 2
b
2.2
2.0
b 3
MO-235
All information provided in this document is subject to legal disclaimers.
JEDEC
4
0.9
0.7
b 4
0
A
REFERENCES
w
0.25
0.19
M
Rev. 2 — 16 May 2011
c
N-channel 8.3 mΩ 30 V TrenchMOS logic level FET in LFPAK
mounting
A
base
0.30
0.24
c 2
c 2
JEITA
scale
4.10
3.80
D
2.5
(1)
A 2
A
D 1
max
4.20
c
(1)
A 1
E
5.0
4.8
C
(1)
C
X
E 1
5 mm
3.3
3.1
(1)
1.27
e
D 1
detail X
6.2
5.8
H
PSMN8R0-30YL
PROJECTION
EUROPEAN
0.85
0.40
L
1.3
0.8
L 1
b 3
L
E 1
1.3
0.8
L 2
© NXP B.V. 2011. All rights reserved.
0.25
ISSUE DATE
w
(A )
b 4
06-03-16
11-03-25
3
y C
0.1
y
θ
SOT669
8°
0°
θ
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