BLF6G22L-40P NXP Semiconductors, BLF6G22L-40P Datasheet - Page 6

• Manufacturer Part Number: BLF6G22L-40P
• Description: LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G22L-40P_6G22LS-40P
Product data sheet
Fig 4.
Fig 6.
(dB)
G
(1) f = 2112.5 MHz
(2) f = 2140 MHz
(3) f = 2167.5 MHz
(1) f = 2112.5 MHz
(2) f = 2140 MHz
(3) f = 2167.5 MHz
p
22
18
14
10
28
V
efficiency as function of output power; typical
values
V
1-carrier W-CDMA power gain and drain efficiency as function of output power; typical values
1-carrier W-CDMA power gain and drain
DS
DS
= 28 V; I
= 28 V; I
32
7.4 1-carrier W-CDMA
(1)
(1)
Dq
Dq
(2)
(2)
= 410 mA.
= 410 mA.
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
36
(3)
(3)
η
40
D
G
PAR
(dB)
p
8
6
4
2
0
28
44
All information provided in this document is subject to legal disclaimers.
aaa-000331
P
L
(dBm)
BLF6G22L-40P; BLF6G22LS-40P
Rev. 1 — 22 September 2011
(1)
32
48
72
48
24
0
(2)
(%)
η
(3)
D
36
Fig 5.
40
ACPR
(dBc)
(1) f = 2112.5 MHz
(2) f = 2140 MHz
(3) f = 2167.5 MHz
-10
-30
-50
-70
5M
28
V
1-carrier W-CDMA adjacent channel power
ratio as a function of output power;
typical values
44
DS
aaa-000333
P
L
= 28 V; I
(dBm)
(1)
32
48
(2)
Dq
= 410 mA.
(3)
(1)
36
(2)
(3)
Power LDMOS transistor
40
ACPR
5M
© NXP B.V. 2011. All rights reserved.
44
ACPR
aaa-000332
P
L
(dBm)
10M
48
ACPR
-10
-30
-50
-70
(dBc)
6 of 16
10M