BF1201 NXP Semiconductors, BF1201 Datasheet - Page 3

• Manufacturer Part Number: BF1201
• Description: Enhancement type Field-Effect Transistor in a plastic SOT143B package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. T
THERMAL CHARACTERISTICS
2000 Mar 29
handbook, halfpage
V
I
I
I
P
T
T
R
SYMBOL
D
G1
G2
SYMBOL
stg
j
DS
tot
N-channel dual-gate PoLo MOS-FETs
th j-s
(1) BF1201WR.
(2) BF1201 and BF1201R.
(mW)
s
P tot
250
200
150
100
is the temperature of the soldering point of the source lead.
50
0
0
drain-source voltage
drain current (DC)
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction to soldering point
Fig.4 Power derating curve.
BF1201; BF1201R
BF1201WR
BF1201; BF1201R
BF1201WR
50
PARAMETER
100
(2)
(1)
150
T s (°C)
PARAMETER
MCD934
200
T
T
s
s
 113 C; note 1
 109 C; note 1
3
CONDITIONS
BF1201; BF1201R; BF1201WR






65

MIN.
VALUE
185
155
10
30
10
10
200
200
+150
150
Product specification
MAX.
UNIT
K/W
K/W
V
mA
mA
mA
mW
mW
C
C
UNIT