BF1201 NXP Semiconductors, BF1201 Datasheet - Page 5

• Manufacturer Part Number: BF1201
• Description: Enhancement type Field-Effect Transistor in a plastic SOT143B package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2000 Mar 29
handbook, halfpage
handbook, halfpage
N-channel dual-gate PoLo MOS-FETs
V
T
V
T
Fig.7
j
j
DS
DS
= 25 C.
= 25 C.
(mA)
(μA)
I G1
Fig.5 Transfer characteristics; typical values.
I D
100
= 5 V.
= 5 V.
25
20
15
10
80
60
40
20
5
0
0
0
0
Gate 1 current as a function of gate 1
voltage; typical values.
0.5
0.5
1
1
V G2-S = 4 V
V G2-S = 4 V
1.5
1.5
2
2
V G1-S (V)
V G1-S (V)
3 V
2 V
3.5 V
3 V
2.5 V
2 V
1.5 V
1 V
3.5 V
2.5 V
1.5 V
MCD935
MCD937
2.5
2.5
5
handbook, halfpage
handbook, halfpage
V
T
V
T
Fig.8
G2-S
j
DS
j
(mA)
= 25 C.
(mS)
= 25 C.
y fs
I D
= 5 V.
Fig.6 Output characteristics; typical values.
24
16
40
30
20
10
BF1201; BF1201R; BF1201WR
= 4 V.
8
0
0
0
0
Forward transfer admittance as a function
of drain current; typical values.
2
5
10
4
2 V
15
6
V G1-S = 1.8 V
Product specification
V G2-S = 4 V
2.5 V
20
8
V DS (V)
I D (mA)
3.5 V
3 V
MCD936
MCD938
1.7 V
1.6 V
1.5 V
1.4 V
1.3 V
1.2 V
10
25