STM8L152C6 STMicroelectronics, STM8L152C6 Datasheet - Page 82

no-image

STM8L152C6

Manufacturer Part Number
STM8L152C6
Description
STM8L-Ultra Low Power-8 bits Microcontrollers
Manufacturer
STMicroelectronics
Datasheet

Specifications of STM8L152C6

Temp. Range
- 40 °C to 85, 105 or 125 °C
5 Low Power Modes
Wait, Low power run (5.1 μA), Low power wait (3 μA), Active-halt with full RTC (1.3 μA), Halt (350 nA)
Consumption
195 μA/MHz+440μA
Ultralow Leakage Per I/0
50 nA
Fast Wakeup From Halt
4.7 μs
Lcd
up to 4x28 segments w/ step-up converter
4 Channels; Supported Peripherals
ADC, DAC, SPI, I2C, USART, timers
2 Watchdogs
1 Window, 1 Independent

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STM8L152C676
Manufacturer:
ST
0
Part Number:
STM8L152C6T3
Manufacturer:
ST
0
Part Number:
STM8L152C6T6
Manufacturer:
ST
Quantity:
2 000
Part Number:
STM8L152C6T6
Manufacturer:
STMicroelectronics
Quantity:
10 000
Part Number:
STM8L152C6T6
Manufacturer:
ST
Quantity:
2 000
Part Number:
STM8L152C6T6
Manufacturer:
ST
Quantity:
10 000
Part Number:
STM8L152C6T6
Manufacturer:
ST
Quantity:
150
Part Number:
STM8L152C6T6
Manufacturer:
ST
Quantity:
20 000
Part Number:
STM8L152C6T6
0
Company:
Part Number:
STM8L152C6T6
Quantity:
6 000
Company:
Part Number:
STM8L152C6T6
Quantity:
1 500
Company:
Part Number:
STM8L152C6T6
Quantity:
1 500
Part Number:
STM8L152C6T6.
Manufacturer:
ST
0
Part Number:
STM8L152C6T6TR
Manufacturer:
STMicroelectronics
Quantity:
20 000
Part Number:
STM8L152C6T6TR
Manufacturer:
STMicroelectronics
Quantity:
10 000
Part Number:
STM8L152C6T6TR
Manufacturer:
ST
Quantity:
20 000
Part Number:
STM8L152C6T6TR
0
Electrical parameters
9.3.5
Table 36.
1. Data based on characterization results, not tested in production.
2. Conforming to JEDEC JESD22a117
3. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation
4. Data based on characterization performed on the whole data memory.
82/126
Symbol
N
t
RET
V
t
I
RW
prog
prog
addresses a single byte.
DD
(2)
(3)
Operating voltage
(all modes, read/write/erase)
Programming time for 1 or 64 bytes (block)
erase/write cycles (on programmed byte)
Programming time for 1 to 64 bytes (block)
write cycles (on erased byte)
Programming/ erasing consumption
Data retention (program memory) after 10000
erase/write cycles at T
(6 suffix)
Data retention (program memory) after 10000
erase/write cycles at T
(3 suffix)
Data retention (data memory) after 300000
erase/write cycles at T
(6 suffix)
Data retention (data memory) after 300000
erase/write cycles at T
(3 suffix)
Erase/write cycles (program memory)
Erase/write cycles (data memory)
Flash program and data EEPROM memory
Memory characteristics
T
Table 35.
1. Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware
Flash memory
A
Symbol
= -40 to 125 °C unless otherwise specified.
V
registers (only in Halt mode). Guaranteed by characterization, not tested in production.
RM
RAM and hardware registers
Parameter
Data retention mode
A
A
A
A
= –40 to +85 °C
Parameter
–40 to +85 °C
–40 to +125 °C
–40 to +125 °C
Doc ID 15962 Rev 9
(1)
Halt mode (or Reset)
T
T
A
A
T
T
f
A
SYSCLK
+25 °C, V
+25 °C, V
A
Conditions
T
T
T
T
RET
RET
RET
RET
Conditions
–40 to +125 °C
(6 suffix),
–40 to +85 °C
(3 suffix)
= 16 MHz
+125 °C
+125 °C
+85 °C
+85 °C
DD
DD
= 3.0 V
= 1.8 V
1.65
Min
STM8L151xx, STM8L152xx
300
30
30
10
1.65
Min
5
5
(4)
(1)
(1)
(1)
(1)
(1)
(1)
Typ
Typ
0.7
6
3
Max
Max
3.6
(1)
kcycles
years
Unit
Unit
mA
ms
ms
V
V

Related parts for STM8L152C6