ST7260E1 STMicroelectronics, ST7260E1 Datasheet - Page 118

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ST7260E1

Manufacturer Part Number
ST7260E1
Description
LOW SPEED USB 8-BIT MCU FAMILY WITH UP TO 8K FLASH/ROM AND SERIAL COMMUNICATION INTERFACE (SCI)
Manufacturer
STMicroelectronics
Datasheet

Specifications of ST7260E1

4 Or 8 Kbytes Program Memory
high density Flash (HDFlash), or FastROM with readout and write protection
Electrical characteristics
16.7
16.7.1
16.7.2
118/139
EMC characteristics
Susceptibility and emission tests are performed on a sample basis during product
characterization.
Functional EMS (electromagnetic susceptibility)
Based on a simple running application on the product (toggling 2 LEDs through I/O ports),
the product is stressed by two electromagnetic events until a failure occurs (indicated by the
LEDs).
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations:
The software flowchart must include the management of runaway conditions such as:
Prequalification trials:
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the RESET pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behaviour is detected, the software can be
hardened to prevent unrecoverable errors occurring (see application note AN1015).
ESD: Electrostatic discharge (positive and negative) is applied on all pins of the device
until a functional disturbance occurs. This test conforms with the IEC 1000-4-2
standard.
FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and
VSS through a 100 pF capacitor, until a functional disturbance occurs. This test
conforms with the IEC 1000-4-4 standard.
Corrupted program counter
Unexpected reset
Critical data corruption (control registers...)
ST7260xx

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