ST72521R9-Auto STMicroelectronics, ST72521R9-Auto Datasheet - Page 234

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ST72521R9-Auto

Manufacturer Part Number
ST72521R9-Auto
Description
8-bit MCU for automotive
Manufacturer
STMicroelectronics
Datasheet

Specifications of ST72521R9-Auto

Hdflash Endurance
100 cycles, data retention 20 years
Clock Sources
crystal/ceramic resonator oscillators, internal RC oscillator and bypass for external clock
4 Power Saving Modes
Halt, Active Halt, Wait and Slow
Electrical characteristics
Table 142. EMS test results
20.7.2
Table 143. EMI emissions
1. Data based on characterization results, not tested in production.
234/276
Symbol
Symbol Parameter
V
V
S
FESD
FFTB
EMI
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
Fast transient voltage burst limits to be applied
through 100pF on V
functional disturbance
Peak level
EMI (electromagnetic interference)
Based on a simple application running on the product (toggling two LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm SAE J 1752/3 which specifies the board and the loading of each pin.
.
conforming to SAE J 1752/3
Parameter
LQFP64 14 x 14 package
DD
V
DD
and V
 5V, T
Conditions
DD
pins to induce a
A
 +25°C,
Doc ID 17660 Rev 1
Flash device:
V
conforms to IEC 1000-4-2
ROM device:
V
conforms to IEC 1000-4-2
Flash device:
V
conforms to IEC 1000-4-4
DD
DD
DD
0.1 MHz to 30 MHz
30 MHz to 130 MHz
130 MHz to 1 GHz
SAE EMI Level
 5V, T
 5V, T
 5V, T
frequency band
Monitored
A
A
A
 +25°C, f
 +25°C, f
 +25°C, f
Conditions
OSC
OSC
OSC
Max vs [f
8/4 MHz
 8 MHz,
 8 MHz,
 8 MHz,
2.5
15
20
0
OSC
ST72521xx-Auto
16/8 MHz
/f
CPU
3.0
15
27
5
Level/Class
]
(1)
4B
3B
3B
dBµV
Unit
-

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