T835H STMicroelectronics, T835H Datasheet - Page 2

• Manufacturer Part Number: T835H
• Description: High-temperature 8A Triacs
• Manufacturer: STMicroelectronics

1
Table 2.
Table 3.
1. minimum I
2. for both polarities of A2 referenced to A1.
2/10
V
(dI/dt)c
DSM
Symbol
Symbol
dV/dt
I
P
I
T(RMS)
I
GT
I
dI/dt
V
V
T
I
G(AV)
H
TSM
GM
I
T
I
GD
stg
GT
²
/V
L
(2)
t
j
(1)
(2)
RSM
(2)
GT
Characteristics
Absolute maximum ratings
Electrical characteristics (T
On-state rms current (full sine wave)
Non repetitive surge peak on-state
current (full cycle, T
I
Critical rate of rise of on-state current I
= 2 x I
Non repetitive surge peak off-state
voltage
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
V
V
I
I
V
Without snubber, T
²
T
G
is guaranted at 20% of I
t Value for fusing
D
D
D
= 500 mA
= 1.2 I
= 12 V, R
= V
= 67% V
GT
DRM
, t
GT
r
, R
≤ 100 ns
L
DRM,
L
= 33 Ω
= 3.3 kΩ
Test conditions
gate open, T
j
= 150 °C
j
initial = 25 °C)
GT
max.
j
= 150 °C
j
Parameter
Doc ID 13564 Rev 2
= 25 °C, unless otherwise specified)
G
D
TO-220AB Ins
F = 50 Hz
F = 60 Hz
t
F = 120 Hz
t
t
p
p
p
2
= 10 ms
= 10 ms
= 20 µs
PAK, TO-220AB
Quadrant
I - II - III
I - II - III
I - II - III
I - III
II
T
T
t = 20 ms
t = 16.7 ms
T
T
T
T
MAX.
MAX.
MAX.
MAX.
MIN.
MIN.
MIN.
c
c
j
j
j
j
= 150 °C
= 25 °C
= 150 °C
= 150 °C
= 136 °C
= 123 °C
T835H
1000
35
35
50
80
11
- 40 to + 150
- 40 to + 150
V
Value
0.15
DRM
1.0
Value
+ 100
84
42
80
50
T850H
8
4
1
/V
1500
110
50
75
60
14
RRM
A/ms
A/µs
V/µs
Unit
Unit
mA
mA
A
mA
W
°C
A
A
V
A
V
V
²
s