T835H STMicroelectronics, T835H Datasheet - Page 5

• Manufacturer Part Number: T835H
• Description: High-temperature 8A Triacs
• Manufacturer: STMicroelectronics

Figure 7.
Figure 9.
Figure 11. Leakage current versus junction
10000
1.0E+04
1.0E+03
1.0E+02
1.0E+01
1.0E+00
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0E-01
1.0E-02
1000
100
0.1
10
0.01
25
width t < 10 ms and corresponding value of I t
dI/dt limitation: 50 A/µs
V
V
DRM
DRM
p
current for a sinusoidal pulse with
Relative variation of critical rate of
decrease of main current (dI/dt)c
versus reapplied (dV/dt)c
temperature for different values of
blocking voltage (typical values)
Non-repetitive surge peak on-state
=V
=V
RRM
RRM
50
=200 V
=200 V
1.0
0.10
V
V
DRM
DRM
=V
=V
(dV/dt)
RRM
RRM
75
typical values
=400 V
=400 V
T
C
j
(°C)
(V/µs)
100
V
V
DRM
DRM
10.0
1.00
=V
=V
RRM
RRM
2
=600 V
=600 V
Tj initial=25 °C
125
I
TSM
I²t
t
P
Doc ID 13564 Rev 2
(ms)
100.0
10.00
150
Figure 8.
Figure 10. Relative variation of critical rate of
Figure 12. Variation of thermal resistance
8
7
6
5
4
3
2
1
0
80
70
60
50
40
30
20
10
2.5
2.0
1.5
1.0
0.5
0.0
0
25
0
-40
I
H
-20
& I
5
L
I
GT
50
Relative variation of I
junction temperature
(typical values)
decrease of main current versus
junction temperature
junction to ambient versus copper
surface under tab
0
Epoxy printed circuit board FR4,
10
copper thickness = 35 µm
20
15
75
40
S
T
CU
T
j
(°C)
j
20
(°C)
(cm²)
60
100
80
25
100
GT
30
,I
125
120
H
, I
35
L
D²PAK
140
vs
150
160
40
5/10